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Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) achieved

Foreign code F110003764
File No. E06713US2
Posted date Jul 4, 2011
Country United States of America
Application number 04139808
Gazette No. 20080185690
Gazette No. 07955983
Date of filing Mar 3, 2008
Gazette Date Aug 7, 2008
Gazette Date Jun 7, 2011
Title Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) achieved
Abstract A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.
  • Inventor, and Inventor/Applicant
  • Imer, Bilge M.; Goleta CA [US]
  • Speck, James S.; Goleta CA [US]
  • DenBaars, Steven P.; Goleta CA [US]
  • The Regents of the University of California, Oakland CA [US]
  • Japan Science and Technology Agency, Kawaguchi, Saitama Prefecture [JP]
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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