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Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) 実績あり

外国特許コード F110003765
整理番号 E06714US1
掲載日 2011年7月4日
出願国 アメリカ合衆国
出願番号 44408306
公報番号 20060270087
公報番号 7338828
出願日 平成18年5月31日(2006.5.31)
公報発行日 平成18年11月30日(2006.11.30)
公報発行日 平成20年3月4日(2008.3.4)
優先権データ
  • 2005US-60685908 (2005.5.31) US
発明の名称 (英語) Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) 実績あり
発明の概要(英語) (US7338828)
A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD).
The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AlN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.
特許請求の範囲(英語) [claim1]
1. A method of growing a planar non-polar m-plane III-Nitride epitaxial film, comprising:
(a) growing non-polar m-{1-100} plane III-Nitride on a suitable substrate using metalorganic chemical vapor deposition (MOCVD).
[claim2]
2. The method of claim 1, wherein the substrate comprises an m-silicon carbide (SiC) substrate.
[claim3]
3. The method of claim 1, wherein the non-polar m-plane III-Nitride comprises m-plane gallium nitride (GaN).
[claim4]
4. The method of claim 1, further comprising performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface prior to the growing step.
[claim5]
5. The method of claim 1, further comprising annealing the substrate prior to the growing step.
[claim6]
6. The method of claim 1, further comprising growing a nucleation layer on the substrate and growing the non-polar m-plane III-Nitride on the nucleation layer.
[claim7]
7. The method of claim 6, wherein the nucleation layer comprises aluminum nitride (AlN).
[claim8]
8. The method of claim 1, further comprising:
(1) annealing the substrate;(2) growing a nucleation layer on the substrate after the annealing step;
and(3) growing the non polar m-plane III-Nitride on the nucleation layer.
[claim9]
9. The method of claim 1, wherein the non-polar m-plane III-Nitride is a planar epitaxial layer.
[claim10]
10. A device, wafer, substrate or template fabricated using the method of claim 1.
[claim11]
11. A method of growing a planar non-polar m-plane III-Nitride epitaxial film, comprising:
(a) growing non-polar m-plane III-Nitride on a suitable substrate using metalorganic chemical vapor deposition (MOCVD), comprising:
(1) performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface;(2) annealing the substrate after performing the solvent clean and acid dip;(3) growing a nucleation layer on the substrate after the annealing step;
and(4) growing a planar epitaxial layer of the non point m-plane III-Nitride on the nucleation layer.
  • 発明者/出願人(英語)
  • IMER BILGE M
  • SPECK JAMES S
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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