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Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) achieved

Foreign code F110003765
File No. E06714US1
Posted date Jul 4, 2011
Country United States of America
Application number 44408306
Gazette No. 20060270087
Gazette No. 7338828
Date of filing May 31, 2006
Gazette Date Nov 30, 2006
Gazette Date Mar 4, 2008
Priority data
  • 2005US-60685908 (May 31, 2005) US
Title Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) achieved
Abstract (US7338828)
A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD).
The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AlN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.
Scope of claims [claim1]
1. A method of growing a planar non-polar m-plane III-Nitride epitaxial film, comprising:
(a) growing non-polar m-{1-100} plane III-Nitride on a suitable substrate using metalorganic chemical vapor deposition (MOCVD).
[claim2]
2. The method of claim 1, wherein the substrate comprises an m-silicon carbide (SiC) substrate.
[claim3]
3. The method of claim 1, wherein the non-polar m-plane III-Nitride comprises m-plane gallium nitride (GaN).
[claim4]
4. The method of claim 1, further comprising performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface prior to the growing step.
[claim5]
5. The method of claim 1, further comprising annealing the substrate prior to the growing step.
[claim6]
6. The method of claim 1, further comprising growing a nucleation layer on the substrate and growing the non-polar m-plane III-Nitride on the nucleation layer.
[claim7]
7. The method of claim 6, wherein the nucleation layer comprises aluminum nitride (AlN).
[claim8]
8. The method of claim 1, further comprising:
(1) annealing the substrate;(2) growing a nucleation layer on the substrate after the annealing step;
and(3) growing the non polar m-plane III-Nitride on the nucleation layer.
[claim9]
9. The method of claim 1, wherein the non-polar m-plane III-Nitride is a planar epitaxial layer.
[claim10]
10. A device, wafer, substrate or template fabricated using the method of claim 1.
[claim11]
11. A method of growing a planar non-polar m-plane III-Nitride epitaxial film, comprising:
(a) growing non-polar m-plane III-Nitride on a suitable substrate using metalorganic chemical vapor deposition (MOCVD), comprising:
(1) performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface;(2) annealing the substrate after performing the solvent clean and acid dip;(3) growing a nucleation layer on the substrate after the annealing step;
and(4) growing a planar epitaxial layer of the non point m-plane III-Nitride on the nucleation layer.
  • Inventor, and Inventor/Applicant
  • IMER BILGE M
  • SPECK JAMES S
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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