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Lateral growth method for defect reduction of semipolar nitride films achieved

Foreign code F110003770
File No. E06717US1
Posted date Jul 4, 2011
Country United States of America
Application number 48622406
Gazette No. 20070015345
Gazette No. 08148244
Date of filing Jul 13, 2006
Gazette Date Jan 18, 2007
Gazette Date Apr 3, 2012
Title Lateral growth method for defect reduction of semipolar nitride films achieved
Abstract A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas of the substrate at the exclusion of other areas of the substrate, wherein the selective growth process includes lateral growth of nitride material by a lateral epitaxial overgrowth (LEO), sidewall lateral epitaxial overgrowth (SLEO), cantilever epitaxy or nanomasking.
  • Inventor, and Inventor/Applicant
  • Baker, Troy J.; Santa Barbara CA [US]
  • Haskell, Benjamin A.; Santa Barbara CA [US]
  • Speck, James S.; Goleta CA [US]
  • Nakamura, Shuji; Santa Barbara CA [US]
  • The Regents of the University of California, Oakland CA [US]
  • Japan Science and Technology Agency, [JP]
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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