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Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition 実績あり

外国特許コード F110003776
整理番号 E06723US1
掲載日 2011年7月4日
出願国 アメリカ合衆国
出願番号 51779706
公報番号 20090184342
公報番号 7575947
出願日 平成18年9月8日(2006.9.8)
公報発行日 平成21年7月23日(2009.7.23)
公報発行日 平成21年8月18日(2009.8.18)
優先権データ
  • 2005US-60715491 (2005.9.9) US
発明の名称 (英語) Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition 実績あり
発明の概要(英語) (US7575947)
A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.
特許請求の範囲(英語) [claim1]
1. A method for growing a semi-polar nitride semiconductor film via metalorganic chemical vapor deposition (MOCVD) on a substrate, comprising: (a) growing a nitride nucleation or buffer layer on a substrate; and
(b) growing a semi-polar nitride semiconductor film on the nitride nucleation or buffer layer, wherein a growth surface of the semi-polar nitride semiconductor film is parallel to the substrate's surface.
[claim2]
2. The method of claim 1, wherein the nitride nucleation or buffer layer comprises AlxInyGa1-x-yN with x=1 and y=0.
[claim3]
3. The method of claim 1, wherein the semi-polar nitride semiconductor film comprises multiple layers having varying or graded compositions.
[claim4]
4. The method of claim 1, wherein the semi-polar nitride semiconductor film contains one or more layers of dissimilar (Al,Ga,In,B)N composition.
[claim5]
5. The method of claim 1, wherein the semi-polar nitride semiconductor film comprises a heterostructure containing layers of dissimilar (Al,Ga,In,B)N composition.
[claim6]
6. The method of claim 1, wherein the semi-polar nitride semiconductor film is doped with elements consisting essentially of Fe, Si, and Mg.
[claim7]
7. The method of claim 1, wherein the growth surface is greater than a 10 micrometer wide area.
[claim8]
8. The method of claim 1, wherein the semi-polar nitride semi-conductor film is grown to cover a 2 inch diameter substrate.
[claim9]
9. The method of claim 1, further comprising nitridizing the substrate prior to growing the nucleation or buffer layer.
[claim10]
10. The method of claim 1, wherein the semi-polar nitride semiconductor film is used as a template or substrate for subsequent growth, by hydride vapor phase epitaxy (HVPE), metalorganic chemical vapor deposition (MOCVD), or molecular beam epitaxy (MBE).
[claim11]
11. A device fabricated using the method of claim 1.
[claim12]
12. The method of claim 1, wherein a surface roughness of the semi-polar nitride semiconductor film is less than 7 nm.
  • 発明者/出願人(英語)
  • IZA MICHAEL
  • BAKER TROY J
  • HASKELL BENJAMIN A
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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