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Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition achieved

Foreign code F110003776
File No. E06723US1
Posted date Jul 4, 2011
Country United States of America
Application number 51779706
Gazette No. 20090184342
Gazette No. 7575947
Date of filing Sep 8, 2006
Gazette Date Jul 23, 2009
Gazette Date Aug 18, 2009
Priority data
  • 2005US-60715491 (Sep 9, 2005) US
Title Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition achieved
Abstract (US7575947)
A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.
Scope of claims [claim1]
1. A method for growing a semi-polar nitride semiconductor film via metalorganic chemical vapor deposition (MOCVD) on a substrate, comprising: (a) growing a nitride nucleation or buffer layer on a substrate; and
(b) growing a semi-polar nitride semiconductor film on the nitride nucleation or buffer layer, wherein a growth surface of the semi-polar nitride semiconductor film is parallel to the substrate's surface.
[claim2]
2. The method of claim 1, wherein the nitride nucleation or buffer layer comprises AlxInyGa1-x-yN with x=1 and y=0.
[claim3]
3. The method of claim 1, wherein the semi-polar nitride semiconductor film comprises multiple layers having varying or graded compositions.
[claim4]
4. The method of claim 1, wherein the semi-polar nitride semiconductor film contains one or more layers of dissimilar (Al,Ga,In,B)N composition.
[claim5]
5. The method of claim 1, wherein the semi-polar nitride semiconductor film comprises a heterostructure containing layers of dissimilar (Al,Ga,In,B)N composition.
[claim6]
6. The method of claim 1, wherein the semi-polar nitride semiconductor film is doped with elements consisting essentially of Fe, Si, and Mg.
[claim7]
7. The method of claim 1, wherein the growth surface is greater than a 10 micrometer wide area.
[claim8]
8. The method of claim 1, wherein the semi-polar nitride semi-conductor film is grown to cover a 2 inch diameter substrate.
[claim9]
9. The method of claim 1, further comprising nitridizing the substrate prior to growing the nucleation or buffer layer.
[claim10]
10. The method of claim 1, wherein the semi-polar nitride semiconductor film is used as a template or substrate for subsequent growth, by hydride vapor phase epitaxy (HVPE), metalorganic chemical vapor deposition (MOCVD), or molecular beam epitaxy (MBE).
[claim11]
11. A device fabricated using the method of claim 1.
[claim12]
12. The method of claim 1, wherein a surface roughness of the semi-polar nitride semiconductor film is less than 7 nm.
  • Inventor, and Inventor/Applicant
  • IZA MICHAEL
  • BAKER TROY J
  • HASKELL BENJAMIN A
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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