Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
| Foreign code | F110003776 |
|---|---|
| File No. | E06723US1 |
| Posted date | Jul 4, 2011 |
| Country | United States of America |
| Application number | 51779706 |
| Gazette No. | 20090184342 |
| Gazette No. | 7575947 |
| Date of filing | Sep 8, 2006 |
| Gazette Date | Jul 23, 2009 |
| Gazette Date | Aug 18, 2009 |
| Priority data |
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| Title |
Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
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| Abstract |
(US7575947) A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film. |
| Scope of claims |
[claim1] 1. A method for growing a semi-polar nitride semiconductor film via metalorganic chemical vapor deposition (MOCVD) on a substrate, comprising: (a) growing a nitride nucleation or buffer layer on a substrate; and (b) growing a semi-polar nitride semiconductor film on the nitride nucleation or buffer layer, wherein a growth surface of the semi-polar nitride semiconductor film is parallel to the substrate's surface. [claim2] 2. The method of claim 1, wherein the nitride nucleation or buffer layer comprises AlxInyGa1-x-yN with x=1 and y=0. [claim3] 3. The method of claim 1, wherein the semi-polar nitride semiconductor film comprises multiple layers having varying or graded compositions. [claim4] 4. The method of claim 1, wherein the semi-polar nitride semiconductor film contains one or more layers of dissimilar (Al,Ga,In,B)N composition. [claim5] 5. The method of claim 1, wherein the semi-polar nitride semiconductor film comprises a heterostructure containing layers of dissimilar (Al,Ga,In,B)N composition. [claim6] 6. The method of claim 1, wherein the semi-polar nitride semiconductor film is doped with elements consisting essentially of Fe, Si, and Mg. [claim7] 7. The method of claim 1, wherein the growth surface is greater than a 10 micrometer wide area. [claim8] 8. The method of claim 1, wherein the semi-polar nitride semi-conductor film is grown to cover a 2 inch diameter substrate. [claim9] 9. The method of claim 1, further comprising nitridizing the substrate prior to growing the nucleation or buffer layer. [claim10] 10. The method of claim 1, wherein the semi-polar nitride semiconductor film is used as a template or substrate for subsequent growth, by hydride vapor phase epitaxy (HVPE), metalorganic chemical vapor deposition (MOCVD), or molecular beam epitaxy (MBE). [claim11] 11. A device fabricated using the method of claim 1. [claim12] 12. The method of claim 1, wherein a surface roughness of the semi-polar nitride semiconductor film is less than 7 nm. |
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| IPC(International Patent Classification) | |
| Reference ( R and D project ) | ERATO NAKAMURA Inhomogeneous Crystal AREA |
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