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Method for improved growth of semipolar (Al,In,Ga,B)N 実績あり

外国特許コード F110003778
整理番号 E06725US1
掲載日 2011年7月4日
出願国 アメリカ合衆国
出願番号 65557307
公報番号 20070218703
公報番号 7691658
出願日 平成19年1月19日(2007.1.19)
公報発行日 平成19年9月20日(2007.9.20)
公報発行日 平成22年4月6日(2010.4.6)
優先権データ
  • 2006US-60760739 (2006.1.20) US
発明の名称 (英語) Method for improved growth of semipolar (Al,In,Ga,B)N 実績あり
発明の概要(英語) (US7691658)
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate.
Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
特許請求の範囲(英語) [claim1]
1. A method for improved growth of a semipolar nitride semiconductor film comprising: (a) depositing a semipolar nitride semiconductor film on a miscut substrate, wherein a growth surface of the semipolar nitride semiconductor film is more than 10 microns wide and substantially parallel to the miscut substrate's surface.
[claim2]
2. The method of claim 1, wherein the substrate is miscut away from a low index crystal orientation.
[claim3]
3. The method of claim 1, wherein the miscut has a magnitude and direction.
[claim4]
4. The method of claim 3, wherein the direction and magnitude of the miscut are chosen to affect at least one of the following properties of the semipolar nitride semiconductor thin film: the epitaxial relationship, crystal symmetry, layer polarity, dislocation density, surface morphology and electrical properties.
[claim5]
5. The method of claim 3, wherein the magnitude of the miscut varies depending on the substrate material, an orientation of the semipolar nitride semiconductor thin film, a type of deposition, and deposition conditions.
[claim6]
6. The method of claim 3, wherein the magnitude of the miscut is a miscut angle that ranges from 0.5 deg.-20 deg..
[claim7]
7. The method of claim 6, wherein the magnitude of the miscut is a miscut angle that preferably varies from 0.5 deg.-3 deg..
[claim8]
8. The method of claim 1, wherein a substrate for growth of the semipolar nitride semiconductor film is miscut in a given crystallographic direction, thereby forming the miscut substrate and lowering a symmetry of the substrate to match the semipolar nitride semiconductor film's symmetry.
[claim9]
9. The method of claim 8, wherein the semipolar nitride semiconductor film contains a single crystallographic domain.
[claim10]
10. The method of claim 8, wherein the low symmetry semipolar nitride semiconductor film is deposited heteroepitaxially on the higher symmetry substrate.
[claim11]
11. The method of claim 1, wherein the semipolar nitride semiconductor film comprises an alloy composition of (Ga,Al,In,B)N semiconductors having a formula GanAlxInyBzN where 0 <= n <= 1, 0 <= x <= 1, 0 <= y <= 1, 0 <= z <= 1 and n+x+y+z=1.
[claim12]
12. The method of claim 1, wherein the semipolar nitride semiconductor film is {10-11} gallium nitride and the miscut substrate is a {100} MgAl2O4 spinel substrate miscut in the <011> direction.
[claim13]
13. The method of claim 1, wherein the semipolar nitride semiconductor film is {11-22} gallium nitride and the miscut substrate is a {1-100} Al2O3 sapphire substrate miscut in the <0001> direction.
[claim14]
14. The method of claim 1, wherein the miscut substrate is obtained by cutting a bulk nitride crystal along a semipolar plane and growing the semipolar nitride semiconductor thin film homoepitaxially on the miscut substrate.
[claim15]
15. The method of claim 14, wherein the semipolar plane's exposed surface has a Nitrogen face.
[claim16]
16. The method of claim 1, wherein the miscut substrate provides step edges or kinks that serve as preferential nucleation sites for growth of the semipolar nitride semiconductor thin film.
[claim17]
17. The method of claim 16, wherein the preferential nucleation sites provide for improved layer properties, such as better coalescence of nuclei, reduced defect densities or smoother, more planar interfaces or surfaces as compared to deposition on non miscut substrates.
[claim18]
18. The method of claim 1, wherein the semipolar nitride semiconductor thin film deposited on the miscut substrate has better crystallinity and reduced threading dislocations as compared to a semipolar nitride semiconductor thin film deposited on a non miscut substrate.
[claim19]
19. The method of claim 2, wherein macroscopic surface roughness and faceting of the semipolar nitride semiconductor film decreases with increasing miscut angle.
[claim20]
20. The method of claim 1, further comprising: (1) miscutting a substrate;
(2) loading the substrate into a reactor;
(3) heating the substrate under a flow comprising at least one of nitrogen, hydrogen or ammonia;
(4) depositing the semipolar nitride semiconductor thin film on the heated substrate; and
(5) cooling the substrate under a nitrogen overpressure.
[claim21]
21. The method of claim 20, wherein the depositing step (4) comprises: (i) depositing a nucleation layer on the heated substrate; and
(ii) depositing the semipolar nitride semiconductor thin film on the nucleation layer.
[claim22]
22. A device fabricated using the method of claim 1.
[claim23]
23. The device of claim 22, wherein the device is a light emitting diode having a brighter emission than a device fabricated on a non-miscut substrate.
[claim24]
24. The device of claim 22, wherein the miscut substrate controls a relative orientation of a total polarization field in the device.
[claim25]
25. A method for improved growth of a lower symmetry layer on a higher symmetry substrate comprising: (a) miscutting a higher symmetry substrate to match a symmetry of a lower symmetry layer; and
(b) depositing the lower symmetry layer heteroepitaxially on the miscut higher symmetry substrate.
[claim26]
26. The method of claim 1, wherein the semipolar nitride semiconductor film is deposited heteroepitaxially on the miscut substrate and the miscut substrate is a different material from gallium nitride.
  • 発明者/出願人(英語)
  • KAEDING JOHN F
  • LEE DONG-SEON
  • IZA MICHAEL
  • BAKER TROY J
  • SATO HITOSHI
  • HASKELL BENJAMIN A
  • SPECK JAMES S
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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