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Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth UPDATE 実績あり

外国特許コード F110003780
整理番号 E06732US1
掲載日 2011年7月4日
出願国 アメリカ合衆国
出願番号 76562907
公報番号 20080001165
公報番号 7755172
出願日 平成19年6月20日(2007.6.20)
公報発行日 平成20年1月3日(2008.1.3)
公報発行日 平成22年7月13日(2010.7.13)
優先権データ
  • 2006US-60815507 (2006.6.21) US
発明の名称 (英語) Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth UPDATE 実績あり
発明の概要(英語) (US7755172)
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique.
The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
特許請求の範囲(英語) [claim1]
1. A GaN layer overlaid on an N-polar surface of a GaN substrate, wherein the GaN substrate is made from a GaN bulk crystal grown ammonothermally on a GaN seed and the N-polar surface as grown is smoother than an as-grown Ga-polar surface of the ammonothermally grown GaN bulk crystal.
[claim2]
2. The GaN layer of claim 1, wherein the GaN layer is grown under pressure less than 760 Torr.
[claim3]
3. The GaN layer of claim 1, further comprising an AlGaN layer overlaid on an N-polar surface of the GaN layer, and a second GaN layer overlaid on the AlGaN layer, wherein electrons are induced at the interface between the AlGaN layer and the second GaN layer on the second GaN layer side in order to fabricate an electronic device.
[claim4]
4. An opto-electronic device comprising: a plurality of n-type group III nitride layers overlaid on an N-polar surface of a GaN substrate, wherein the GaN substrate is made from a GaN bulk crystal grown ammonothermally on a GaN seed and the N-polar surface as grown is smoother than an as-grown Ga-polar surface of the ammonothermally grown GaN bulk crystal;
at least one group III nitride light-emitting active layer overlaid on the plurality of n-type group III nitride layers; and
at least one p-type group III nitride layer having an Mg doping overlaid on the active layers.
[claim5]
5. The opto-electronic device in claim 4, wherein a concentration of the Mg-doped layer is more than 1021 cm-3.
[claim6]
6. The opto-electronic device of claim 5, wherein a thickness of the Mg-doped layer is more than 0.1 micron.
[claim7]
7. An electronic device comprising: a GaN layer, wherein the GaN layer is overlaid on a surface other than a C-plane of a GaN substrate, the GaN substrate is made from a GaN bulk crystal grown ammonothermally on a GaN seed, and the surface as grown is smoother than an as-grown Ga-polar surface of the ammonothermally grown GaN bulk crystal.
[claim8]
8. The electronic device of claim 7, further comprising an AlGaN layer overlaid on a surface of the GaN layer, and a second GaN layer overlaid on the AlGaN layer, wherein electrons are induced at the interface between the AlGaN layer and the second GaN layer on the second GaN layer side.
[claim9]
9. The electronic device of claim 7 wherein the surface of the GaN substrate is an M-plane {10-10}surface.
[claim10]
10. The electronic device of claim 7 wherein the surface of the GaN substrate is an A-plane {11-20}surface.
[claim11]
11. The electronic device of claim 7 wherein the surface of the GaN substrate is a {10-11}surface.
[claim12]
12. The electronic device of claim 7 wherein the surface of the GaN substrate is a {10-1-1}surface.
[claim13]
13. The electronic device of claim 7 wherein the surface of the GaN substrate is a {11-22}surface.
[claim14]
14. The electronic device of claim 7 wherein the surface of the GaN substrate is a {11-2-2}surface.
[claim15]
15. An opto-electronic device comprising: a GaN substrate having a surface other than a C-plane, wherein the GaN substrate is made from a GaN bulk crystal grown ammonothermally on a GaN seed and the surface as grown is smoother than an as-grown Ga-polar surface of the ammonothermally grown GaN bulk crystal;
a plurality of n-type group III nitride layers overlaid on the surface of the GaN substrate;
at least one group III nitride light-emitting active layer overlaid on the plurality of n-type group III nitride layers; and
at least one p-type group III nitride layer having an Mg doping overlaid on the active layer.
[claim16]
16. The opto-electronic device in claim 15, wherein a concentration of the Mg-doped layer is more than 1021 cm-3.
[claim17]
17. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is an M-plane {10-10}surface.
[claim18]
18. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is an A-plane {11-20}surface.
[claim19]
19. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is a {10-11}surface.
[claim20]
20. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is a {10-1-1}surface.
[claim21]
21. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is a {11-22}surface.
[claim22]
22. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is a {11-2-2}surface.
[claim23]
23. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is a {20-21}surface.
  • 発明者/出願人(英語)
  • HASHIMOTO TADAO
  • SATO HITOSHI
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • SILVERBROOK RESEARCH
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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