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Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth achieved

Foreign code F110003780
File No. E06732US1
Posted date Jul 4, 2011
Country United States of America
Application number 76562907
Gazette No. 20080001165
Gazette No. 7755172
Date of filing Jun 20, 2007
Gazette Date Jan 3, 2008
Gazette Date Jul 13, 2010
Priority data
  • 2006US-60815507 (Jun 21, 2006) US
Title Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth achieved
Abstract (US7755172)
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique.
The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
Scope of claims [claim1]
1. A GaN layer overlaid on an N-polar surface of a GaN substrate, wherein the GaN substrate is made from a GaN bulk crystal grown ammonothermally on a GaN seed and the N-polar surface as grown is smoother than an as-grown Ga-polar surface of the ammonothermally grown GaN bulk crystal.
[claim2]
2. The GaN layer of claim 1, wherein the GaN layer is grown under pressure less than 760 Torr.
[claim3]
3. The GaN layer of claim 1, further comprising an AlGaN layer overlaid on an N-polar surface of the GaN layer, and a second GaN layer overlaid on the AlGaN layer, wherein electrons are induced at the interface between the AlGaN layer and the second GaN layer on the second GaN layer side in order to fabricate an electronic device.
[claim4]
4. An opto-electronic device comprising: a plurality of n-type group III nitride layers overlaid on an N-polar surface of a GaN substrate, wherein the GaN substrate is made from a GaN bulk crystal grown ammonothermally on a GaN seed and the N-polar surface as grown is smoother than an as-grown Ga-polar surface of the ammonothermally grown GaN bulk crystal;
at least one group III nitride light-emitting active layer overlaid on the plurality of n-type group III nitride layers; and
at least one p-type group III nitride layer having an Mg doping overlaid on the active layers.
[claim5]
5. The opto-electronic device in claim 4, wherein a concentration of the Mg-doped layer is more than 1021 cm-3.
[claim6]
6. The opto-electronic device of claim 5, wherein a thickness of the Mg-doped layer is more than 0.1 micron.
[claim7]
7. An electronic device comprising: a GaN layer, wherein the GaN layer is overlaid on a surface other than a C-plane of a GaN substrate, the GaN substrate is made from a GaN bulk crystal grown ammonothermally on a GaN seed, and the surface as grown is smoother than an as-grown Ga-polar surface of the ammonothermally grown GaN bulk crystal.
[claim8]
8. The electronic device of claim 7, further comprising an AlGaN layer overlaid on a surface of the GaN layer, and a second GaN layer overlaid on the AlGaN layer, wherein electrons are induced at the interface between the AlGaN layer and the second GaN layer on the second GaN layer side.
[claim9]
9. The electronic device of claim 7 wherein the surface of the GaN substrate is an M-plane {10-10}surface.
[claim10]
10. The electronic device of claim 7 wherein the surface of the GaN substrate is an A-plane {11-20}surface.
[claim11]
11. The electronic device of claim 7 wherein the surface of the GaN substrate is a {10-11}surface.
[claim12]
12. The electronic device of claim 7 wherein the surface of the GaN substrate is a {10-1-1}surface.
[claim13]
13. The electronic device of claim 7 wherein the surface of the GaN substrate is a {11-22}surface.
[claim14]
14. The electronic device of claim 7 wherein the surface of the GaN substrate is a {11-2-2}surface.
[claim15]
15. An opto-electronic device comprising: a GaN substrate having a surface other than a C-plane, wherein the GaN substrate is made from a GaN bulk crystal grown ammonothermally on a GaN seed and the surface as grown is smoother than an as-grown Ga-polar surface of the ammonothermally grown GaN bulk crystal;
a plurality of n-type group III nitride layers overlaid on the surface of the GaN substrate;
at least one group III nitride light-emitting active layer overlaid on the plurality of n-type group III nitride layers; and
at least one p-type group III nitride layer having an Mg doping overlaid on the active layer.
[claim16]
16. The opto-electronic device in claim 15, wherein a concentration of the Mg-doped layer is more than 1021 cm-3.
[claim17]
17. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is an M-plane {10-10}surface.
[claim18]
18. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is an A-plane {11-20}surface.
[claim19]
19. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is a {10-11}surface.
[claim20]
20. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is a {10-1-1}surface.
[claim21]
21. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is a {11-22}surface.
[claim22]
22. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is a {11-2-2}surface.
[claim23]
23. The opto-electronic device of claim 15 wherein the surface of the GaN substrate is a {20-21}surface.
  • Inventor, and Inventor/Applicant
  • HASHIMOTO TADAO
  • SATO HITOSHI
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • SILVERBROOK RESEARCH
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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