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Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth 実績あり

外国特許コード F110003781
整理番号 E06732US2
掲載日 2011年7月4日
出願国 アメリカ合衆国
出願番号 79261510
公報番号 20100275837
公報番号 8263424
出願日 平成22年6月2日(2010.6.2)
公報発行日 平成22年11月4日(2010.11.4)
公報発行日 平成24年9月11日(2012.9.11)
優先権データ
  • 2006US-60815507 (2006.6.21) US
  • 2007US-11765629 (2007.6.20) US
発明の名称 (英語) Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth 実績あり
発明の概要(英語) (US8263424)
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique.
The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
特許請求の範囲(英語) [claim1]
1. A method for directly growing a non-Ga-polar surface of gallium nitride (GaN), comprising: placing a seed crystal of GaN having an exposed non-Ga-polar surface of GaN into an autoclave;
placing a mineralizer into the autoclave;
placing a source into the autoclave;
adding ammonia to the autoclave;
heating the autoclave; and
ammonothermally growing the GaN in the heated autoclave, using the mineralizer, source and ammonia, wherein the exposed non-Ga-polar surface of the GaN is smoother than a Ga-polar surface of the GaN.
[claim2]
2. The method of claim 1, wherein the mineralizer is selected from a group comprising NaNH2, KNH2, LiNH2, NH4Cl, NH4Br, and NH4I.
[claim3]
3. The method of claim 1, wherein the source comprises polycrystalline GaN.
[claim4]
4. The method of claim 1, wherein the autoclave is heated in zones.
[claim5]
5. The method of claim 4, wherein a first zone is heated to a first temperature and a second zone is heated to a second temperature.
[claim6]
6. The method of claim 5, wherein the source is placed in the first zone and the seed crystal of GaN having the exposed non-Ga polar surface of GaN is placed in the second zone.
[claim7]
7. The method of claim 6, wherein the non-Ga polar surface is an N-polar C-plane (000-1) surface.
[claim8]
8. The method of claim 6, wherein the non-Ga polar surface is an M-plane {10-10} surface.
[claim9]
9. The method of claim 6, wherein the non-Ga polar surface is an A-plane {11-20} surface.
[claim10]
10. The method of claim 6, wherein the non-Ga polar surface is a {10-11} surface.
[claim11]
11. The method of claim 6, wherein the non-Ga polar surface is a {10-1-1} surface.
[claim12]
12. The method of claim 6, wherein the non-Ga polar surface is a {11-22} surface.
[claim13]
13. The method of claim 6, wherein the non-Ga polar surface is a {11-2-2} surface.
[claim14]
14. The method of claim 1, wherein the source comprises Ga metal.
[claim15]
15. A method of fabricating a gallium nitride (GaN) substrate, comprising: ammonothermally growing a GaN substrate resulting in an exposed N-polar (N-face) or M-plane surface that is smoother than a Ga-polar (Ga-face) surface of the GaN substrate.
[claim16]
16. The method of claim 15, wherein the N-polar (N-face) or M-plane surface is smooth enough for growth of device layers.
[claim17]
17. The method of claim 16, wherein the N-polar (N-face) or M-plane surface is smooth enough for direct growth of device layers.
[claim18]
18. The method of claim 17, wherein the N-polar (N-face) or M-plane surface is smooth enough for direct growth of device layers without subsequent processing.
[claim19]
19. A method of fabricating an opto-electronic device comprising: fabricating a GaN substrate from a GaN bulk crystal grown ammonothermally on a GaN seed, wherein a growth surface of the GaN bulk crystal is not a Ga-polar surface and the growth surface as grown is smoother than a Ga-polar surface; and
growing one or more group III nitride layers on the growth surface of the GaN substrate.
[claim20]
20. The method of claim 19, wherein the growing step comprises: growing a plurality of n-type group III nitride layers on the growth surface;
growing at least one group III nitride light-emitting active layer on the plurality of n-type group III nitride layers; and
growing at least one p-type group III nitride layer having an Mg doping on the active layers.
[claim21]
21. The method of claim 20, wherein an Mg concentration of the Mg-doped layer is more than 1021 cm-3.
[claim22]
22. The method of claim 19, wherein the growth surface is an M-plane {10-10} surface.
[claim23]
23. The method of claim 19, wherein the growth surface is an A-plane {11-20} surface.
[claim24]
24. The method of claim 19, wherein the growth surface is a {10-11} surface.
[claim25]
25. The method of claim 19, wherein the growth surface is a {10-1-1} surface.
[claim26]
26. The method of claim 19, wherein the growth surface is a {11-22} surface.
[claim27]
27. The method of claim 19, wherein the growth surface is a {11-2-2} surface.
[claim28]
28. The method of claim 19, wherein the growth surface is a {20-21} surface.
[claim29]
29. A method for fabricating a GaN layer, comprising: utilizing an N-polar surface or an M-plane surface of the GaN layer as a growth surface, wherein the N-polar surface or the M-plane surface is prepared and directly exposed using an ammonothermal growth technique and the N-polar surface or the M-plane surface is smoother than a Ga-polar surface of the GaN layer.
[claim30]
30. The method of claim 29, further comprising growing one or more group-III nitride layers to the N-polar or M-plane surface of the GaN layer.
[claim31]
31. A method for growing a group-III nitride layer, comprising: ammonothermally growing a group-III nitride layer on a substrate, wherein the group-III nitride layer comprises an N-face of a C-plane (000-1) or a M-plane {10-10} that is directly exposed as a result of the growth of the group-III nitride layer and the N-face of the C-plane (000-1) or the M-plane {10-10} is smoother than a Ga-face of the C-plane (0001).
[claim32]
32. The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is substantially co-planar with a surface of the substrate.
[claim33]
33. The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is tilted with respect to a surface of the substrate.
[claim34]
34. The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is tilted at an angle less than 10 degrees with respect to the surface of the substrate.
[claim35]
35. The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} directly accepts growth of at least one additional group-III nitride layer.
[claim36]
36. A method for fabricating a GaN substrate, comprising: directly growing a GaN substrate with an exposed N-face or M-plane surface that is of device quality using an ammonothermal growth method, wherein the exposed N-face or M-plane surface is smoother than a Ga-polar surface of the GaN substrate.
[claim37]
37. The method of claim 36, further comprising growing a group-III nitride layer on the substrate, wherein the group III nitride layer comprises an N-face of a C-plane (000-1) or M-plane {10-10} that is directly exposed as a result of the growth of the group-III nitride layer.
[claim38]
38. The method of claim 36, wherein the N-face or M-plane is substantially co-planar with the plane of the substrate, rather than substantially perpendicular.
[claim39]
39. The method of claim 36, wherein the N-face or M-plane is misaligned with the plane of the substrate.
[claim40]
40. The method of claim 36, wherein the group-III nitride layer directly accepts growth of at least one additional group-III nitride layer.
  • 発明者/出願人(英語)
  • HASHIMOTO TADAO
  • SATO HITOSHI
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF CALIFORNIA
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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