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Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth achieved

Foreign code F110003781
File No. E06732US2
Posted date Jul 4, 2011
Country United States of America
Application number 79261510
Gazette No. 20100275837
Gazette No. 8263424
Date of filing Jun 2, 2010
Gazette Date Nov 4, 2010
Gazette Date Sep 11, 2012
Priority data
  • 2006US-60815507 (Jun 21, 2006) US
  • 2007US-11765629 (Jun 20, 2007) US
Title Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth achieved
Abstract (US8263424)
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique.
The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
Scope of claims [claim1]
1. A method for directly growing a non-Ga-polar surface of gallium nitride (GaN), comprising: placing a seed crystal of GaN having an exposed non-Ga-polar surface of GaN into an autoclave;
placing a mineralizer into the autoclave;
placing a source into the autoclave;
adding ammonia to the autoclave;
heating the autoclave; and
ammonothermally growing the GaN in the heated autoclave, using the mineralizer, source and ammonia, wherein the exposed non-Ga-polar surface of the GaN is smoother than a Ga-polar surface of the GaN.
[claim2]
2. The method of claim 1, wherein the mineralizer is selected from a group comprising NaNH2, KNH2, LiNH2, NH4Cl, NH4Br, and NH4I.
[claim3]
3. The method of claim 1, wherein the source comprises polycrystalline GaN.
[claim4]
4. The method of claim 1, wherein the autoclave is heated in zones.
[claim5]
5. The method of claim 4, wherein a first zone is heated to a first temperature and a second zone is heated to a second temperature.
[claim6]
6. The method of claim 5, wherein the source is placed in the first zone and the seed crystal of GaN having the exposed non-Ga polar surface of GaN is placed in the second zone.
[claim7]
7. The method of claim 6, wherein the non-Ga polar surface is an N-polar C-plane (000-1) surface.
[claim8]
8. The method of claim 6, wherein the non-Ga polar surface is an M-plane {10-10} surface.
[claim9]
9. The method of claim 6, wherein the non-Ga polar surface is an A-plane {11-20} surface.
[claim10]
10. The method of claim 6, wherein the non-Ga polar surface is a {10-11} surface.
[claim11]
11. The method of claim 6, wherein the non-Ga polar surface is a {10-1-1} surface.
[claim12]
12. The method of claim 6, wherein the non-Ga polar surface is a {11-22} surface.
[claim13]
13. The method of claim 6, wherein the non-Ga polar surface is a {11-2-2} surface.
[claim14]
14. The method of claim 1, wherein the source comprises Ga metal.
[claim15]
15. A method of fabricating a gallium nitride (GaN) substrate, comprising: ammonothermally growing a GaN substrate resulting in an exposed N-polar (N-face) or M-plane surface that is smoother than a Ga-polar (Ga-face) surface of the GaN substrate.
[claim16]
16. The method of claim 15, wherein the N-polar (N-face) or M-plane surface is smooth enough for growth of device layers.
[claim17]
17. The method of claim 16, wherein the N-polar (N-face) or M-plane surface is smooth enough for direct growth of device layers.
[claim18]
18. The method of claim 17, wherein the N-polar (N-face) or M-plane surface is smooth enough for direct growth of device layers without subsequent processing.
[claim19]
19. A method of fabricating an opto-electronic device comprising: fabricating a GaN substrate from a GaN bulk crystal grown ammonothermally on a GaN seed, wherein a growth surface of the GaN bulk crystal is not a Ga-polar surface and the growth surface as grown is smoother than a Ga-polar surface; and
growing one or more group III nitride layers on the growth surface of the GaN substrate.
[claim20]
20. The method of claim 19, wherein the growing step comprises: growing a plurality of n-type group III nitride layers on the growth surface;
growing at least one group III nitride light-emitting active layer on the plurality of n-type group III nitride layers; and
growing at least one p-type group III nitride layer having an Mg doping on the active layers.
[claim21]
21. The method of claim 20, wherein an Mg concentration of the Mg-doped layer is more than 1021 cm-3.
[claim22]
22. The method of claim 19, wherein the growth surface is an M-plane {10-10} surface.
[claim23]
23. The method of claim 19, wherein the growth surface is an A-plane {11-20} surface.
[claim24]
24. The method of claim 19, wherein the growth surface is a {10-11} surface.
[claim25]
25. The method of claim 19, wherein the growth surface is a {10-1-1} surface.
[claim26]
26. The method of claim 19, wherein the growth surface is a {11-22} surface.
[claim27]
27. The method of claim 19, wherein the growth surface is a {11-2-2} surface.
[claim28]
28. The method of claim 19, wherein the growth surface is a {20-21} surface.
[claim29]
29. A method for fabricating a GaN layer, comprising: utilizing an N-polar surface or an M-plane surface of the GaN layer as a growth surface, wherein the N-polar surface or the M-plane surface is prepared and directly exposed using an ammonothermal growth technique and the N-polar surface or the M-plane surface is smoother than a Ga-polar surface of the GaN layer.
[claim30]
30. The method of claim 29, further comprising growing one or more group-III nitride layers to the N-polar or M-plane surface of the GaN layer.
[claim31]
31. A method for growing a group-III nitride layer, comprising: ammonothermally growing a group-III nitride layer on a substrate, wherein the group-III nitride layer comprises an N-face of a C-plane (000-1) or a M-plane {10-10} that is directly exposed as a result of the growth of the group-III nitride layer and the N-face of the C-plane (000-1) or the M-plane {10-10} is smoother than a Ga-face of the C-plane (0001).
[claim32]
32. The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is substantially co-planar with a surface of the substrate.
[claim33]
33. The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is tilted with respect to a surface of the substrate.
[claim34]
34. The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} is tilted at an angle less than 10 degrees with respect to the surface of the substrate.
[claim35]
35. The method of claim 31, wherein the N-face of the C-plane (000-1) or the M-plane {10-10} directly accepts growth of at least one additional group-III nitride layer.
[claim36]
36. A method for fabricating a GaN substrate, comprising: directly growing a GaN substrate with an exposed N-face or M-plane surface that is of device quality using an ammonothermal growth method, wherein the exposed N-face or M-plane surface is smoother than a Ga-polar surface of the GaN substrate.
[claim37]
37. The method of claim 36, further comprising growing a group-III nitride layer on the substrate, wherein the group III nitride layer comprises an N-face of a C-plane (000-1) or M-plane {10-10} that is directly exposed as a result of the growth of the group-III nitride layer.
[claim38]
38. The method of claim 36, wherein the N-face or M-plane is substantially co-planar with the plane of the substrate, rather than substantially perpendicular.
[claim39]
39. The method of claim 36, wherein the N-face or M-plane is misaligned with the plane of the substrate.
[claim40]
40. The method of claim 36, wherein the group-III nitride layer directly accepts growth of at least one additional group-III nitride layer.
  • Inventor, and Inventor/Applicant
  • HASHIMOTO TADAO
  • SATO HITOSHI
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF CALIFORNIA
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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