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Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices achieved

Foreign code F110003785
File No. E06736US2
Posted date Jul 4, 2011
Country United States of America
Application number 91490610
Gazette No. 20110037052
Gazette No. 08178373
Date of filing Oct 28, 2010
Gazette Date Feb 17, 2011
Gazette Date May 15, 2012
Title Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices achieved
  • Inventor, and Inventor/Applicant
  • Schmidt, Mathew C.; Santa Barbara CA [US]
  • Kim, Kwang Choong; Seoul [KR]
  • Sato, Hitsohi; Kanagawa [JP]
  • DenBaars, Steven P.; Goleta CA [US]
  • Speck, James S.; Goleta CA [US]
  • Nakamura, Shuji; Santa Barbara CA [US]
  • The Regents of the University of California, Oakland CA [US]
  • Japan Science and Technology Agency, Saitama Prefecture [JP]
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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