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Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers achieved

Foreign code F110003788
File No. E06739US1
Posted date Jul 5, 2011
Country United States of America
Application number 03012408
Gazette No. 20080198881
Gazette No. 7839903
Date of filing Feb 12, 2008
Gazette Date Aug 21, 2008
Gazette Date Nov 23, 2010
Priority data
  • 2007US-60889516 (Feb 12, 2007) US
Title Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers achieved
Abstract (US7839903)
Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser.
The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser.
To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
Scope of claims [claim1]
1. A nonpolar or semipolar Group-III nitride diode laser, wherein optical gain is controlled by orienting an axis of light propagation in relation to an optical polarization direction and the optical polarization direction is determined by a crystallographic orientation of the nonpolar or semipolar Group-III nitride diode laser.
[claim2]
2. The diode laser of claim 1, wherein the axis of light propagation is oriented substantially perpendicular to the optical polarization direction to maximize optical gain.
[claim3]
3. The diode laser of claim 1, wherein the axis of light propagation is oriented substantially along a c-axis of the nonpolar or semipolar Group-III nitride diode laser to maximize optical gain.
[claim4]
4. The diode laser of claim 1, wherein the optical gain is substantially maximized when a dot product of a first vector lying along a c-axis of the nonpolar or semipolar Group-III nitride diode laser and a second vector lying along the axis of light propagation is equal to 1.
[claim5]
5. The diode laser of claim 1, wherein the optical gain is substantially minimized when a dot product of a first vector lying along a c-axis of the nonpolar or semipolar Group-III nitride diode laser and a second vector lying along the axis of light propagation is equal to 0.
[claim6]
6. A method of controlling optical gain in a nonpolar or semipolar Group III-nitride diode laser by orienting an axis of light propagation in relation to an optical polarization direction and the optical polarization direction is determined by a crystallographic orientation of the nonpolar or semipolar Group-III nitride diode laser.
[claim7]
7. The method of claim 6, wherein the axis of light propagation is oriented substantially perpendicular to the optical polarization direction to maximize optical gain.
[claim8]
8. The method of claim 6, wherein the axis of light propagation is oriented substantially along a c-axis of the nonpolar or semipolar Group-III nitride diode laser to maximize optical gain.
[claim9]
9. The method of claim 6, wherein the optical gain is substantially maximized when a dot product of a first vector lying along a c-axis of the nonpolar or semipolar Group-III nitride diode laser and a second vector lying along the axis of light propagation is equal to 1.
[claim10]
10. The method of claim 6, wherein the optical gain is substantially minimized when a dot product of a first vector lying along a c-axis of the nonpolar or semipolar Group-III nitride diode laser and a second vector lying along the axis of light propagation is equal to 0.
[claim11]
11. A method of controlling optical gain in a nonpolar or semipolar Group-III nitride diode laser by orienting an axis of light propagation in relation to a crystallographic orientation of the nonpolar or semipolar Group-III nitride diode laser.
[claim12]
12. The method of claim 11, wherein the axis of light propagation is substantially perpendicular to mirror facets of the nonpolar or semipolar Group-III nitride diode laser.
[claim13]
13. The method of claim 11, wherein the crystallographic orientation determines an optical polarization direction of the nonpolar or semipolar Group-III nitride diode laser.
[claim14]
14. The method of claim 11, wherein the optical gain approaches a maximum when the axis of light propagation is oriented along a c-axis of the nonpolar or semipolar Group-III nitride diode laser.
[claim15]
15. The method of claim 11, wherein the diode laser is an m-plane Group-III nitride diode laser, and the axis of light propagation is oriented at an angle between a c-axis and an a-axis of the m-plane Group-III nitride diode laser, the optical gain decreases monotonically when rotating the axis of light propagation from the c-axis to the a-axis, with the optical gain approaching a maximum when the axis of light propagation is oriented along the c-axis.
[claim16]
16. The method of claim 11, wherein the diode laser is an a-plane Group-III nitride diode laser, and the axis of light propagation is oriented at an angle between a c-axis and an m-axis of the a-plane Group-III nitride diode laser, the optical gain decreases monotonically when rotating the axis of light propagation from the c-axis to the m-axis, with the optical gain approaching a maximum when the axis of light propagation is oriented along the c-axis.
[claim17]
17. The method of claim 11, wherein the diode laser is a semipolar Group-III nitride diode laser, and the optical gain approaches a maximum when the axis of light propagation is oriented along a c-axis of the semipolar Group-III nitride diode laser and the optical gain approaches a minimum when the axis of light propagation is oriented along an m-axis or an a-axis of the semipolar Group-III nitride diode laser.
[claim18]
18. A nonpolar or semipolar Group-III nitride diode laser, wherein optical gain is controlled by orienting an axis of light propagation in relation to a crystallographic orientation of the nonpolar or semipolar Group-III nitride diode laser.
[claim19]
19. The diode laser of claim 18, wherein the axis of light propagation is substantially perpendicular to mirror facets of the nonpolar or semipolar Group-III nitride diode laser.
[claim20]
20. The diode laser of claim 18, wherein the crystallographic orientation determines an optical polarization direction of the nonpolar or semipolar Group-III nitride diode laser.
[claim21]
21. The diode laser of claim 18, wherein the optical gain approaches a maximum when the axis of light propagation is oriented along a c-axis of the nonpolar or semipolar Group-III nitride diode laser.
[claim22]
22. The diode laser of claim 18, wherein the diode laser is an m-plane Group-III nitride diode laser, and the axis of light propagation is oriented at an angle between a c-axis and an a-axis of the m-plane Group-III nitride diode laser, the optical gain decreases monotonically when rotating the axis of light propagation from the c-axis to the a-axis, with the optical gain approaching a maximum when the axis of light propagation is oriented along the c-axis.
[claim23]
23. The diode laser of claim 18, wherein the diode laser is an a-plane Group-III nitride diode laser, and the axis of light propagation is oriented at an angle between a c-axis and an m-axis of the a-plane Group-III nitride diode laser, the optical gain decreases monotonically when rotating the axis of light propagation from the c-axis to the m-axis, with the optical gain approaching a maximum when the axis of light propagation is oriented along the c-axis.
[claim24]
24. The diode laser of claim 18, wherein the diode laser is a semipolar Group-III nitride diode laser, and the optical gain approaches a maximum when the axis of light propagation is oriented along a c-axis of the semipolar Group-III nitride diode laser and the optical gain approaches a minimum when the axis of light propagation is oriented along an m-axis or an a-axis of the semipolar Group-III nitride diode laser.
  • Inventor, and Inventor/Applicant
  • FARRELL ROBERT M
  • SCHMIDT MATHEW C
  • KIM KWANG-CHOONG
  • MASUI HISASHI
  • FEEZELL DANIEL F
  • SPECK JAMES S
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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