Amorphous oxide and thin film transistor
| 外国特許コード | F110003904 |
|---|---|
| 整理番号 | E06015WO |
| 掲載日 | 2011年7月6日 |
| 出願国 | 欧州特許庁（ＥＰＯ） |
| 出願番号 | 05719601 |
| 公報番号 | 1737044 |
| 公報番号 | 1737044 |
| 出願日 | 平成17年2月28日(2005.2.28) |
| 公報発行日 | 平成18年12月27日(2006.12.27) |
| 公報発行日 | 平成26年12月10日(2014.12.10) |
| 国際出願番号 | JP2005003273 |
| 国際公開番号 | WO2005088726 |
| 国際出願日 | 平成17年2月28日(2005.2.28) |
| 国際公開日 | 平成17年9月22日(2005.9.22) |
| 優先権データ |
|
| 発明の名称 （英語） |
Amorphous oxide and thin film transistor
|
| 発明の概要（英語） |
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 **18 /cm **3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 10 **18 /cm **3 is used in the channel layer 2.(see diagramm) |
| 特許請求の範囲（英語） |
[claim1] 1. A thin film transistor, comprising: a source electrode (6); a drain electrode (5); a gate electrode (4); a channel layer (2); and a gate insulating film (3) positioned between the gate electrode (4) and the channel layer (2), characterized in that the channel layer (2) is formed from a deposited thin film of a transparent amorphous oxide selected from: SnO 2 which is formed as amorphous phase in the presence of In 2O 3 as a host oxide and is represented by In xSn 1-x oxides (0.8 <= x < 1), Indium oxide represented by In 2O 3, or Indium oxide containing neither Zn nor Sn and partly replaced In by Ga and represented by In-Ga oxides, wherein the In-Ga oxides are deposited from a target having a composition of (In 2O 3) 1-x-(Ga 2O 3) x (0 < x <= 0.1), wherein the oxide has an electron mobility of 1 cm **2/(V.sec) or more at room temperature and an electron carrier concentration of less than 10 **18/cm **3 as measured by Hall-effect measurement, and the oxide is deposited at room temperature by a sputtering method or pulsed laser method in an atmosphere containing oxygen gas and without adding an impurity ion for increasing the electrical resistance. [claim2] 2. The thin film transistor according to claim 1, wherein the amorphous oxide is formed on a glass substrate, a metal substrate, a plastic substrate, or a plastic film. [claim3] 3. The thin film transistor according to claim 1, wherein a gate insulating layer (3) comprises one of Al 2O 3, Y 2O 3, and HfO 2 or a mixed crystal compound containing at least two of these compounds. |
|
|
|
|
| 国際特許分類(IPC) |
|
| 参考情報 （研究プロジェクト等） | ERATO HOSONO Transparent ElectroActive Materials AREA |
日本語項目の表示
| 発明の名称 |
アモルファス酸化物及び薄膜トランジスタ
|
|---|
※
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。
『 Amorphous oxide and thin film transistor 』に関するお問合せ
- 国立研究開発法人科学技術振興機構（ＪＳＴ） 知的財産マネジメント推進部
- URL: http://www.jst.go.jp/chizai/
-
E-mail:
- Address: 〒102-8666 東京都千代田区四番町5-3
- TEL: 03-5214-8293
- FAX: 03-5214-8476
※ 同じキーワードでJ-STORE内を検索することが出来ます。→ J-STORE内を検索
