Amorphous oxide and thin film transistor
| Foreign code | F110003904 |
|---|---|
| File No. | E06015WO |
| Posted date | Jul 6, 2011 |
| Country | EPO |
| Application number | 05719601 |
| Gazette No. | 1737044 |
| Gazette No. | 1737044 |
| Date of filing | Feb 28, 2005 |
| Gazette Date | Dec 27, 2006 |
| Gazette Date | Dec 10, 2014 |
| International application number | JP2005003273 |
| International publication number | WO2005088726 |
| Date of international filing | Feb 28, 2005 |
| Date of international publication | Sep 22, 2005 |
| Priority data |
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| Title |
Amorphous oxide and thin film transistor
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| Abstract |
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 **18 /cm **3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 10 **18 /cm **3 is used in the channel layer 2.(see diagramm) |
| Scope of claims |
[claim1] 1. A thin film transistor, comprising: a source electrode (6); a drain electrode (5); a gate electrode (4); a channel layer (2); and a gate insulating film (3) positioned between the gate electrode (4) and the channel layer (2), characterized in that the channel layer (2) is formed from a deposited thin film of a transparent amorphous oxide selected from: SnO 2 which is formed as amorphous phase in the presence of In 2O 3 as a host oxide and is represented by In xSn 1-x oxides (0.8 <= x < 1), Indium oxide represented by In 2O 3, or Indium oxide containing neither Zn nor Sn and partly replaced In by Ga and represented by In-Ga oxides, wherein the In-Ga oxides are deposited from a target having a composition of (In 2O 3) 1-x-(Ga 2O 3) x (0 < x <= 0.1), wherein the oxide has an electron mobility of 1 cm **2/(V.sec) or more at room temperature and an electron carrier concentration of less than 10 **18/cm **3 as measured by Hall-effect measurement, and the oxide is deposited at room temperature by a sputtering method or pulsed laser method in an atmosphere containing oxygen gas and without adding an impurity ion for increasing the electrical resistance. [claim2] 2. The thin film transistor according to claim 1, wherein the amorphous oxide is formed on a glass substrate, a metal substrate, a plastic substrate, or a plastic film. [claim3] 3. The thin film transistor according to claim 1, wherein a gate insulating layer (3) comprises one of Al 2O 3, Y 2O 3, and HfO 2 or a mixed crystal compound containing at least two of these compounds. |
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| Reference ( R and D project ) | ERATO HOSONO Transparent ElectroActive Materials AREA |
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