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TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE achieved

Foreign code F110003919
File No. E06712WO
Posted date Jul 7, 2011
Country EPO
Application number 06737745
Gazette No. 1869707
Gazette No. 1869707
Date of filing Mar 10, 2006
Gazette Date Dec 26, 2007
Gazette Date Jun 13, 2012
International application number PCT/US2006/008595
International publication number WO2006/099138
Date of international filing Mar 10, 2006
Date of international publication Sep 21, 2006
Priority data
  • 660283P (Mar 10, 2005) US
Title TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE achieved
  • Applicant
  • The Regents of the University of California
  • Japan Science and Technology Agency
  • Inventor
  • BAKER, Troy, J.
  • HASKELL, Benjamin, A.
  • FINI, Paul, T.
  • DENBAARS, Steven, P.
  • SPECK, James, S.
  • NAKAMURA, Shuji
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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