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Transparent electroconductive thin film and process for producing the transparent electroconductive thin film

Foreign code F110004023
File No. K02903WO
Posted date Jul 8, 2011
Country EPO
Application number 08791069
Gazette No. 2178095
Gazette No. 2178095
Date of filing Jul 10, 2008
Gazette Date Apr 21, 2010
Gazette Date Mar 4, 2015
International application number JP2008062521
International publication number WO2009008486
Date of international filing Jul 10, 2008
Date of international publication Jan 15, 2009
Priority data
  • 2008JP062521 (Jul 10, 2008) WO
  • P2007-181411 (Jul 10, 2007) JP
Title Transparent electroconductive thin film and process for producing the transparent electroconductive thin film
Abstract Provided are a transparent electroconductive thin film of single-walled carbon nanotubes and its production method capable of further enhancing the electroconductivity and the light transmittance of the film and capable of simplifying the thin film formation process.
The method comprises: dispersing single-walled carbon nanotubes of mixed metallic single-walled carbon nanotubes (m-SWNTs) and semiconductor single-walled carbon nanotubes (s-SWNTs) in an amine solution containing an amine having a boiling point of from 20 to 400 deg.C as a dispersant; centrifuging or filtering the resulting dispersion to concentrate m-SWNTs, thereby giving a dispersion rich in m-SWNTs; and applying the resulting dispersion rich in m-SWNTs onto a substrate to form a thin film thereon.(see diagramm)
Scope of claims [claim1]
1. A method for producing a transparent electroconductive thin film comprising: dispersing single-walled carbon nanotubes of mixed metallic single-walled carbon nanotubes (m-SWNTs) and semiconductor single-walled carbon nanotubes (s-SWNTs) in an amine solution containing an amine having a boiling point of from 20 to 400 deg.C as a dispersant, centrifuging or filtering the resulting dispersion to concentrate m-SWNTs, thereby giving a dispersion rich in m-SWNTs, and applying the resulting dispersion rich in m-SWNTs onto a substrate which substrate is a solid substrate, film or sheet of transparent resin or a glass sheet, to form thereon a thin film with a thickness from 10 to 100 nm.
[claim2]
2. A method for producing a transparent electroconductive thin film as claimed in claim 1, wherein after the resulting dispersion rich in m-SWNTs is applied onto said substrate, the thin film formed is processed with hydrochloric acid.
[claim3]
3. A method for producing a transparent electroconductive thin film as claimed in claim 1, wherein a large number of the single-walled carbon nanotubes of the film are individually separated and uniformly dispersed in the film as kept in contact with each other while randomly crosslinked therein, and there are no aggregates of single-walled nanotubes.
[claim4]
4. A method for producing a transparent electroconductive thin film as claimed in any of claims 1 to 3, wherein the amine is at least one selected from primary amines, secondary amines, tertiary amines and aromatic amines.
[claim5]
5. A method for producing a transparent electroconductive thin film a$ claimed in any of claims 1 to 4, wherein the amine is at least one selected from isopropylamine, diethylamine, propylamine, 1-methylpropylamine, triethylamine and N,N,N',N'-tetramethylenediamine.
[claim6]
6. A method for producing a transparent electroconductive thin film as claimed in any of claims 1 to 5, wherein the single-walled carbon nanotubes are dispersed in the amine solution while ultrasonically processed.
[claim7]
7. A method for producing a transparent electroconductive thin film as claimed in any of claims 1 to 6, wherein the dispersion rich in m-SWNTs is sprayed onto the substrate with an air brush to form a thin film thereon.
[claim8]
8. A method for producing a transparent electroconductive thin film as claimed in any of claims 1 to 7, wherein the dispersion is centrifuged under the condition of from 40,000 to 100,000 G and for 1 to 168 hours.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • MAEDA YUTAKA
  • AKASAKA TAKESHI
IPC(International Patent Classification)
Reference ( R and D project ) PRESTO Search for nanomanufacturing technology and its development AREA
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