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Substrate with organic thin film and transistor using same meetings

Foreign code F110004089
File No. N071-06WO
Posted date Jul 8, 2011
Country EPO
Application number 05721687
Gazette No. 1737045
Gazette No. 1737045
Date of filing Mar 24, 2005
Gazette Date Dec 27, 2006
Gazette Date Nov 4, 2015
International application number JP2005006199
International publication number WO2005091377
Date of international filing Mar 24, 2005
Date of international publication Sep 29, 2005
Priority data
  • 2005JP006199 (Mar 24, 2005) WO
  • P2004-088077 (Mar 24, 2004) JP
Title Substrate with organic thin film and transistor using same meetings
Abstract A substrate having organic thin film capable of growing two dimensionally such organic thin film as C 60 and a transistor using the same are constituted with a substrate (1) having organic thin film by sequentially depositing a buffer layer (3) and organic thin film (4) on the substrate (2), and with the buffer layer orienting the organic thin film (4).
A layer easily oriented with the substrate (2) and the buffer layer (3) may be inserted between the substrate (2) and the buffer layer (3).
A sapphire substrate as the substrate (2), pentacene or pentacene fluoride as the buffer layer (3), and C 60 or rubrene as the organic thin film (4) may be used, thereby C 60 or rubrene two dimensional thin film of high quality can be obtained.
By using such a substrate (1) having organic thin film, a field effect transistor of high quality can be realized.
Scope of claims [claim1]
1. A substrate (1, 10) having an organic thin film (4), wherein: a buffer layer (3) and the organic thin film (4) are sequentially deposited on an insulating substrate (2) so that the organic thin film (4) overlies the buffer layer (3),
said buffer layer (3) consists essentially of either pentacene or pentacene fluoride, characterized in that: said organic thin film (4) is either C n fullerene, wherein n is an integer of 60 or more, or rubrene; and said buffer layer (3) has a thickness of about 1 to 10 molecular layers.
[claim2]
2. The substrate (1, 10) having an organic thin film as set forth in claim 1, wherein a layer (5) is further inserted between said substrate (2) and said buffer layer (3).
[claim3]
3. The substrate (1, 10) having an organic thin film as set forth in claim 1, wherein said insulating substrate (2) is a sapphire substrate.
[claim4]
4. The substrate having an organic thin film as set forth in claim 1, wherein said C n fullerene is C 60.
[claim5]
5. The substrate having an organic thin film as set forth in claim 3, wherein the surface roughness of said sapphire substrate is about the same as the molecular layer of the material to be said buffer layer (3) or even lower.
[claim6]
6. A transistor (20, 30) provided with an organic thin film formed on a substrate according to any of claims 1 to 5, wherein said organic thin film (4) is a channel of said transistor.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • KOINUMA HIDEOMI
  • ITAKA KENJI
  • YAMASHIRO MITSUGU
IPC(International Patent Classification)
Reference ( R and D project ) CREST Development of Advanced Nanostructured Materials for Energy Conversion and Storage AREA
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