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METHOD AND APPARATUS FOR GROWING HIGH QUALITY SINGLE CRYSTAL achieved

Foreign code F110004171
File No. Y0002EP
Posted date Jul 12, 2011
Country EPO
Application number 00927839
Gazette No. 1201793
Gazette No. 1201793
Date of filing May 22, 2000
Gazette Date May 2, 2002
Gazette Date Sep 1, 2004
International application number PCT/JP2000/003264
International publication number WO2000/071786
Date of international filing May 22, 2000
Date of international publication Nov 30, 2000
Priority data
  • P1999-178815 (May 22, 1999) JP
Title METHOD AND APPARATUS FOR GROWING HIGH QUALITY SINGLE CRYSTAL achieved
  • Applicant
  • Japan Science and Technology Agency
  • Inventor
  • SASAKI, Takatomo
  • MORI, Yusuke
  • YOSHIMURA, Masashi
IPC(International Patent Classification)
U.S. Cl./(Sub)
  • C30B15/00
  • C30B15/30B
  • C30B17/00
Specified countries DE,FR,GB
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