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HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES HAVING SURFACE ROUGHENING achieved

Foreign code F110004308
File No. E06704WO
Posted date Jul 13, 2011
Country EPO
Application number 03819251
Gazette No. 1697983
Gazette No. 1697983
Date of filing Dec 9, 2003
Gazette Date Sep 6, 2006
Gazette Date Jun 13, 2012
International application number PCT/US2003/039211
International publication number WO2005/064666
Date of international filing Dec 9, 2003
Date of international publication Jul 14, 2005
Title HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES HAVING SURFACE ROUGHENING achieved
  • Applicant
  • The Regents of The University of California
  • Japan Science and Technology Agency
  • Inventor
  • FUJII, Tetsuo
  • GAO, Yan
  • HU, Evelyn, L.
  • NAKAMURA, Shuji
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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