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Field-effect transistor, single electron transistor, and sensor using same

Foreign code F110004523
File No. A242-23WO
Posted date Jul 19, 2011
Country China
Application number 200480024620
Gazette No. 1842704
Gazette No. 100516854
Date of filing Aug 27, 2004
Gazette Date Oct 4, 2006
Gazette Date Jul 22, 2009
Priority data
  • P2003-307798 (Aug 29, 2003) JP
Title Field-effect transistor, single electron transistor, and sensor using same
Abstract

A sensor for detecting a substance to be detected. The sensor includes a field-effect transistor (1A) having a substrate (2), a source electrode (4) and a drain electrode (5) both installed on the substrate (2), and a channel (6) to serve as a current path between the source electrode (4) and the drain electrode (5). The field-effect transistor (1A) further includes an interaction sensing gate (9) for immobilizing a specific substance (10) interactive selectively with the substance to be detected and a gate (7) to which a voltage is applied so that the interaction is detected as a characteristic variation of the field-effect transistor (1A). Such a structure enables a sensor to detect a substance to be detected with a high detection sensitivity.

  • Applicant
  • JAPAN SCIENCE & TECH AGENCY
  • Inventor
  • MATSUMOTO KAZUHIKO,
  • KOJIMA ATSUHIKO,
  • NAGAO SATORU,
  • KATOU MASANORI,
  • YAMADA YUTAKA,
  • NAGAIKE KAZUHIRO,
  • IFUKU YASUO,
  • MITANI HIROSHI
IPC(International Patent Classification)
Reference ( R and D project ) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
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