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Amorphous oxide and thin film transistor achieved

Foreign code F110004555
File No. E06015WO
Posted date Jul 19, 2011
Country China
Application number 200580007989
Gazette No. 1998087
Gazette No. 1998087
Date of filing Feb 28, 2005
Gazette Date Jul 11, 2007
Gazette Date Dec 31, 2014
International application number JP2005003273
International publication number WO2005088726
Date of international filing Feb 28, 2005
Date of international publication Sep 22, 2005
Priority data
  • 2005JP003273 (Feb 28, 2005) WO
  • P2004-071477 (Mar 12, 2004) JP
  • P2004-325938 (Nov 10, 2004) JP
Title Amorphous oxide and thin film transistor achieved
Abstract The invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide.
More specifically, providing an amorphous oxide having an electron carrier concentration of less than 10<18>/cm<3> and a thin film transistor using the amorphous oxide.
The thin film transistor is provided with a source electrode (6), a drain electrode (5), a gate electrode (4), a gate insulating film (3) and a channel layer (2).
As the channel layer (2), the amorphous oxide having an electron carrier concentration of less than 10<18>/cm<3> is used.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • HOSONO HIDEO
  • HIRANO MASAHIRO
  • KAMIYA TOSHIO
  • NOMURA KENJI
  • OTA HIROMICHI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO HOSONO Transparent ElectroActive Materials AREA
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