Amorphous oxide and thin film transistor
Foreign code | F110004555 |
---|---|
File No. | E06015WO |
Posted date | Jul 19, 2011 |
Country | China |
Application number | 200580007989 |
Gazette No. | 1998087 |
Gazette No. | 1998087 |
Date of filing | Feb 28, 2005 |
Gazette Date | Jul 11, 2007 |
Gazette Date | Dec 31, 2014 |
International application number | JP2005003273 |
International publication number | WO2005088726 |
Date of international filing | Feb 28, 2005 |
Date of international publication | Sep 22, 2005 |
Priority data |
|
Title |
Amorphous oxide and thin film transistor
|
Abstract |
The invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. More specifically, providing an amorphous oxide having an electron carrier concentration of less than 10<18>/cm<3> and a thin film transistor using the amorphous oxide. The thin film transistor is provided with a source electrode (6), a drain electrode (5), a gate electrode (4), a gate insulating film (3) and a channel layer (2). As the channel layer (2), the amorphous oxide having an electron carrier concentration of less than 10<18>/cm<3> is used. |
|
|
|
|
IPC(International Patent Classification) |
|
Reference ( R and D project ) | ERATO HOSONO Transparent ElectroActive Materials AREA |
※
Please contact us by E-mail or facsimile if you have any interests on this patent.
Contact Information for " Amorphous oxide and thin film transistor "
- Japan Science and Technology Agency Department of Intellectual Property Management
- URL: http://www.jst.go.jp/chizai/
-
E-mail:
- Address: 5-3, Yonbancho, Chiyoda-ku, Tokyo, Japan , 102-8666
- Fax: 81-3-5214-8417