Amorphous oxide and thin film transistor
| Foreign code | F110004555 |
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| File No. | E06015WO |
| Posted date | Jul 19, 2011 |
| Country | China |
| Application number | 200580007989 |
| Gazette No. | 1998087 |
| Gazette No. | 1998087 |
| Date of filing | Feb 28, 2005 |
| Gazette Date | Jul 11, 2007 |
| Gazette Date | Dec 31, 2014 |
| International application number | JP2005003273 |
| International publication number | WO2005088726 |
| Date of international filing | Feb 28, 2005 |
| Date of international publication | Sep 22, 2005 |
| Priority data |
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| Title |
Amorphous oxide and thin film transistor
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| Abstract |
The invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. More specifically, providing an amorphous oxide having an electron carrier concentration of less than 10<18>/cm<3> and a thin film transistor using the amorphous oxide. The thin film transistor is provided with a source electrode (6), a drain electrode (5), a gate electrode (4), a gate insulating film (3) and a channel layer (2). As the channel layer (2), the amorphous oxide having an electron carrier concentration of less than 10<18>/cm<3> is used. |
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| Reference ( R and D project ) | ERATO HOSONO Transparent ElectroActive Materials AREA |
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