High-efficiency (B,Al,Ga,In)N group light-emitting diode by surface roughness treatment

The invention discloses a (B,Al,Ga,In)N group light-emitting diode (LED). Light is extracted through a nitrogen surface (N surface) (42) of the LED

and the surface of the N surface is roughened into one or more hexagon conical surfaces. The roughened surface reduces the repeat occurrence of light reflection in the LED, so that more lights are extracted from the outer part of the LED. The surface of the N surface is roughened by anisotropic etching, and the etching comprises dry etching or photoinduced chemistry (PEC) etching.

• THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
• Japan Science and Technology Agency

• H01L  33/00      光の放出に特に適用される少なくとも１つの電位障壁または表面障壁を有する半導体装置；それらの装置またはその部品の製造，あるいは処理に特に適用される方法または装置；それらの装置の細部