High-efficiency (B,Al,Ga,In)N group light-emitting diode by surface roughness treatment
The invention discloses a (B,Al,Ga,In)N group light-emitting diode (LED). Light is extracted through a nitrogen surface (N surface) (42) of the LED
and the surface of the N surface is roughened into one or more hexagon conical surfaces. The roughened surface reduces the repeat occurrence of light reflection in the LED, so that more lights are extracted from the outer part of the LED. The surface of the N surface is roughened by anisotropic etching, and the etching comprises dry etching or photoinduced chemistry (PEC) etching.