High-efficiency (B,Al,Ga,In)N group light-emitting diode by surface roughness treatment
|Posted date||Jul 19, 2011|
|Date of filing||Dec 9, 2003|
|Gazette Date||Dec 16, 2009|
|Gazette Date||Nov 26, 2014|
|Title||High-efficiency (B,Al,Ga,In)N group light-emitting diode by surface roughness treatment|
The invention discloses a (B,Al,Ga,In)N group light-emitting diode (LED). Light is extracted through a nitrogen surface (N surface) (42) of the LED
and the surface of the N surface is roughened into one or more hexagon conical surfaces. The roughened surface reduces the repeat occurrence of light reflection in the LED, so that more lights are extracted from the outer part of the LED. The surface of the N surface is roughened by anisotropic etching, and the etching comprises dry etching or photoinduced chemistry (PEC) etching.
|IPC(International Patent Classification)|
|Reference ( R and D project )||ERATO NAKAMURA Inhomogeneous Crystal AREA|
Contact Information for " High-efficiency (B,Al,Ga,In)N group light-emitting diode by surface roughness treatment "
- Japan Science and Technology Agency Department of Intellectual Property Management
- URL: http://www.jst.go.jp/chizai/
- Address: 5-3, Yonbancho, Chiyoda-ku, Tokyo, Japan , 102-8666
- Fax: 81-3-5214-8476