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High-efficiency (B,Al,Ga,In)N group light-emitting diode by surface roughness treatment

Foreign code F110004559
File No. E06704CN1
Posted date Jul 19, 2011
Country China
Application number 200910142642
Gazette No. 101604721
Gazette No. 101604721
Date of filing Dec 9, 2003
Gazette Date Dec 16, 2009
Gazette Date Nov 26, 2014
Title High-efficiency (B,Al,Ga,In)N group light-emitting diode by surface roughness treatment
Abstract

The invention discloses a (B,Al,Ga,In)N group light-emitting diode (LED). Light is extracted through a nitrogen surface (N surface) (42) of the LED

and the surface of the N surface is roughened into one or more hexagon conical surfaces. The roughened surface reduces the repeat occurrence of light reflection in the LED, so that more lights are extracted from the outer part of the LED. The surface of the N surface is roughened by anisotropic etching, and the etching comprises dry etching or photoinduced chemistry (PEC) etching.

  • Applicant
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
  • Japan Science and Technology Agency
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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