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Highly efficient (B, Al, Ga, In) N based light emitting diodes via surface roughening achieved

Foreign code F110004560
File No. E06704WO
Posted date Jul 19, 2011
Country China
Application number 200380110945
Gazette No. 1886827
Gazette No. 100521120
Date of filing Dec 9, 2003
Gazette Date Dec 27, 2006
Gazette Date Jul 29, 2009
Title Highly efficient (B, Al, Ga, In) N based light emitting diodes via surface roughening achieved
Abstract

A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

  • Applicant
  • UNIV. CALIFORNIA,
  • JAPAN SCIENCE & TECH AGENCY
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
  • Inventor
  • FUJII T.,GAO Y.,HU E. L.,NAKAMURA S
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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