Highly efficient (B, Al, Ga, In) N based light emitting diodes via surface roughening
|Posted date||Jul 19, 2011|
|Date of filing||Dec 9, 2003|
|Gazette Date||Dec 27, 2006|
|Gazette Date||Jul 29, 2009|
|Title||Highly efficient (B, Al, Ga, In) N based light emitting diodes via surface roughening|
A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
|IPC(International Patent Classification)||
|Reference ( R and D project )||ERATO NAKAMURA Inhomogeneous Crystal AREA|
Contact Information for " Highly efficient (B, Al, Ga, In) N based light emitting diodes via surface roughening "
- Japan Science and Technology Agency Department of Intellectual Property Management
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- Address: 5-3, Yonbancho, Chiyoda-ku, Tokyo, Japan , 102-8666
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