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Technique for the growth of planar semi-polar gallium nitride achieved

Foreign code F110004562
File No. E06712WO
Posted date Jul 19, 2011
Country China
Application number 200680007694
Gazette No. 101138091
Gazette No. 101138091
Date of filing Mar 10, 2006
Gazette Date Mar 5, 2008
Gazette Date May 19, 2010
Priority data
  • 20050660283P (Mar 10, 2005) US
Title Technique for the growth of planar semi-polar gallium nitride achieved
  • Applicant
  • UNIV CALIFORNIA
  • Japan Science and Technology Agency
  • Inventor
  • CHAKRABORTY ARPAN,
  • KELLER STACIA,
  • SPECK JAMES,
  • NAKAMURA SHUJI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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