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Method and apparatus for growing high quality single crystal achieved

Foreign code F110004671
File No. Y0002CN
Posted date Jul 20, 2011
Country China
Application number 00807930
Gazette No. 1351679
Gazette No. 1172029
Date of filing May 22, 2000
Gazette Date May 29, 2002
Gazette Date Oct 20, 2004
Priority data
  • P1999-178815 (May 22, 1999) JP
Title Method and apparatus for growing high quality single crystal achieved
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY CORP,
  • Inventor
  • SASAKI TAKATOMO,
  • MORI YUSUKE,
  • YOSHIMURA MASASHI,
  • YOSHMURA MASASHI
IPC(International Patent Classification)
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