Top > Search of International Patents > Method for forming a film and masking mechanism for film-forming device for forming the same

Method for forming a film and masking mechanism for film-forming device for forming the same

Foreign code F110004760
File No. A051-93KR
Posted date Jul 21, 2011
Country Republic of Korea
Application number 20057004832
Gazette No. 20050057515
Gazette No. 100673527
Date of filing Mar 21, 2005
Gazette Date Jun 16, 2005
Gazette Date Jan 24, 2007
International application number JP2003011950
International publication number WO2004027107
Date of international filing Mar 21, 2005
Date of international publication Apr 1, 2004
Priority data
  • P2002-275365 (Sep 20, 2002) JP
Title Method for forming a film and masking mechanism for film-forming device for forming the same
Abstract A masking mechanism for a film forming device, comprising a mask (11) having a first signal acting edge (11a), a second signal acting edge (11b), and a third signal acting edge (11c) and a drive device for moving the mask (11) in a uniaxial direction (A) relative to a substrate (12), wherein three-component thin-films having film thickness gradient directions equally spaced by 120 ° are overlapped on each other by depositing deposited substances for the edges in a same substrate area while the mask (11) is being moved at a specified speed in the uniaxial direction (A) to form a thin-film (13) with a ternary phase diagram.
Scope of claims [claim1]
1. drive unit piece of mask and mask move axis direction for the Board and the

Above mask has a single action edge interaction Chiezo's first single and second single action Chiezo and third,-normal units of the first single action Chiezo Bexleyheath vector and normal units of the second singles between edge Bexleyheath vector and force 1 20 ° without the normal unit of the second singles between edge Bexleyheath vector and normal units of the single action edge above the third Bexleyheath vector and 1 20 ° without, and the normal units of the single action edge above the third Bexleyheath vector and normal units of the first single action Chiezo Bexleyheath vector and 1 Characteristics to do the 20 °, deposition apparatus for masking mechanism.
[claim2]
2. mask wherein one of the above-mentioned uni-axial direction and 90 ° + tips (0 ° ≤ α than 90 °) masks have the sides done in

This mask has the opening of the first and second opening,

Opening of the first has a side at 30 ° + α above axis direction, above the opening of the second axis direction one employs around 30 ° + a to do

Above mask above axis direction and 90 ° + o: sides done and first single action Nee Ridge, above axis direction 30 ° + a; sides do second single action ETSU and the above uni-axial direction one side 30 ° + a to do third single action ETSU to di that characterized the claim 1, deposition apparatus for masking mechanism described.
[claim3]
3. wherein one mask from one disk and

This disc has a notch for the first, second and third,

A notch above the first toward the circumference of the above disc 90 ° + alpha (0 ° ≤ catch 90 °) have the sides done second notch has a do + a 30 degrees above circular circumferential edge, above the third notch above toward the circumference of a circular plate one has around 30 ° + a to do

Above mask above circumferential direction and 9 0 ° + Alpha to do side first single action e ridge and second single action Chiezo sides do + α then the above circumferential direction and 3 0 ° above circumferential direction and one 3 0 ° + alpha at the edge to edge third single action that characterized the claim 1, deposition apparatus for masking mechanism mentioned.
[claim4]
4. Drive piece of mask and mask move axis direction for the Board and the

These masks are triangular-shaped double action single action edge first and second single action edge above one directional base to have other sides interaction Chiezo ETSU has the

First single action Chiezo normal unit vector vector above axis direction and 3 0 ° without the normal unit of the second singles between edge vector vector above uniaxial orientation 3 deposition apparatus for masking mechanism that 0 ° to feature the.
[claim5]
5. Wherein one mask consists of a circular piece of,

This disc has a notch for the first and second,

First notch is toward the circumference of the above Disc 3 sides at 0 ° and one 3 and from 0 ° to form a fan-shaped notch in the second notch above toward the circumference of a circular plate 6 sides at 0 °,-6 sides at 0 ° and above circumferentially sets of parallel sides or from which that notched that characterized the claim 4, deposition apparatus for masking mechanism described.
[claim6]
6. ― Drive sheet mask and the mask move axis direction for the Board and from the

These masks have sides perpendicular to the triangle-shaped apertures at least above uniaxial orientation with the bottom and above axis direction and,

And other openings above the triangular-shaped bottom two sides above axis direction perpendicular to and tri pull effect edge

To form a film thickness gradient in the given direction by selecting speed go in above triangle-shaped apertures above and above moved perpendicular to the above one directional speed determined by the speed of these to feature the deposition apparatus for masking mechanism.
[claim7]
7. Wherein one mask consists of a circular piece of,

This disc has notched in the first and second notch or opening of the first and least, ·

Above the first notch is the fan-shaped notch and with edges perpendicular to the previous circular circumferential notch the second notch, first opening is triangular-shaped opening with bottom parallel in the circumferential direction of a circular plate above, and

Second and above fan-shaped notch two sides of second perpendicular to these radial notch to previous triple action edge or perpendicular to the base non-triangular-shaped openings in the above two sides and above circumferentially notched edges and the above-mentioned triple action Chiezo to be characterized claim 6, deposition apparatus for masking mechanism mentioned.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • KOINUMA HIDEOMI
  • YAMAMOTO YUKIO
  • MATSUMOTO YUJI
  • TAKAHASHI RYOTA
IPC(International Patent Classification)
Reference ( R and D project ) CREST Single Molecule and Atom Level Reactions AREA
Please contact us by E-mail or facsimile if you have any interests on this patent.

PAGE TOP

close
close
close
close
close
close