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N-TYPE TRANSISTOR, PRODUCTION METHODS FOR N-TYPE TRANSISTOR SENSOR AND N-TYPE TRANSISTOR-USE CHANNEL, AND PRODUCTION METHOD OF NANOTUBE STRUCTURE EXHIBITING N-TYPE SEMICONDUCTOR-LIKE CHARACTERISTICS

Foreign code F110004771
File No. A242-50WO
Posted date Jul 21, 2011
Country Republic of Korea
Application number 20077017724
Gazette No. 20070095991
Gazette No. 100924668
Date of filing Feb 10, 2006
Gazette Date Oct 1, 2007
Gazette Date Nov 3, 2009
Priority data
  • P2005-034476 (Feb 10, 2005) JP
Title N-TYPE TRANSISTOR, PRODUCTION METHODS FOR N-TYPE TRANSISTOR SENSOR AND N-TYPE TRANSISTOR-USE CHANNEL, AND PRODUCTION METHOD OF NANOTUBE STRUCTURE EXHIBITING N-TYPE SEMICONDUCTOR-LIKE CHARACTERISTICS
Abstract

In a transistor using a nanotube structure as a channel, a novel, unique n-type transistor having a channel with n-type semiconductor-like characteristics is provided. To achieve this, a nitride compound film (6) is directly formed on the channel (5) of a transistor (1) comprising a source electrode (2), a drain electrode (3), a gate electrode (4), and an n-type channel (5) disposed between the source electrode (2) and the drain electrode (3) and formed of a nanotube structure.

  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • MATSUMOTO KAZUHIKO,
  • KOJIMA ATSUHIKO,
  • NAGAO SATORU
IPC(International Patent Classification)
Reference ( R and D project ) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
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