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HIGHLY EFFICIENT GROUP-III NITRIDE BASED LIGHT EMITTING DIODES VIA FABRICATION OF STRUCTURES ON AN N-FACE SURFACE

Foreign code F110004792
File No. E06704KR1
Posted date Jul 21, 2011
Country Republic of Korea
Application number 20117004218
Gazette No. 20110031248
Gazette No. 101154494
Date of filing Dec 9, 2003
Gazette Date Mar 24, 2011
Gazette Date Jun 13, 2012
Title HIGHLY EFFICIENT GROUP-III NITRIDE BASED LIGHT EMITTING DIODES VIA FABRICATION OF STRUCTURES ON AN N-FACE SURFACE
  • Applicant
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • FUJII TETSUO,
  • GAO YAN,
  • HU EVELYN L,
  • NAKAMURA SHUJI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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