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TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE achieved

Foreign code F110004794
File No. E06712WO
Posted date Jul 21, 2011
Country Republic of Korea
Application number 20077023104
Gazette No. 20070120982
Gazette No. 101145755
Date of filing Mar 10, 2006
Gazette Date Dec 26, 2007
Gazette Date May 16, 2012
Priority data
  • 20050660283P (Mar 10, 2005) US
Title TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE achieved
Abstract

A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {1011} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {1013} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {1122} gallium nitride (GaN) grown on a {1100} sapphire substrate, and (4) {1013} gallium nitride (GaN) grown on a {1100} sapphire substrate.

  • Applicant
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • BAKER TROY J,
  • HASKELL BENJAMIN A,
  • FINI PAUL T,
  • DENBAARS STEVEN P,
  • SPECK JAMES S,
  • NAKAMURA SHUJI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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