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Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices achieved

Foreign code F110004799
File No. E06722WO
Posted date Jul 21, 2011
Country Republic of Korea
Application number 20077030909
Gazette No. 20080025096
Gazette No. 101351396
Date of filing Jun 1, 2006
Gazette Date Mar 19, 2008
Gazette Date Feb 7, 2014
International application number US2006021128
International publication number WO2006130696
Date of international filing Jun 1, 2006
Date of international publication Dec 7, 2006
Priority data
  • 60/686,244P (Jun 1, 2005) US
  • 2006US021128 (Jun 1, 2006) WO
Title Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices achieved
Abstract A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B) N thin films, heterostructures or devices on the planar semipolar (Ga,Al, In,B)N template or nucleation layer.
The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface. ® KIPO & WIPO 2008
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF CALIFORNIA
  • Inventor
  • FARRELL ROBERT M JR
  • BAKER TROY J
  • CHAKRABORTY ARPAN
  • HASKELL BENJAMIN A
  • PATTISON P MORGAN
  • SHARMA RAJAT
  • MISHRA UMESH K
  • DENBAARS STEVEN P
  • SPECK JAMES S
  • NAKAMURA SHUJI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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