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Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition achieved

Foreign code F110004800
File No. E06723WO
Posted date Jul 21, 2011
Country Republic of Korea
Application number 20087008498
Gazette No. 20080063766
Gazette No. 101347848
Date of filing Sep 8, 2006
Gazette Date Jul 7, 2008
Gazette Date Jan 6, 2014
International application number US2006035012
International publication number WO2007030709
Date of international filing Sep 8, 2006
Date of international publication Mar 15, 2007
Priority data
  • 60/715,491P (Sep 9, 2005) US
  • 2006US035012 (Sep 8, 2006) WO
Title Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition achieved
Abstract A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF CALIFORNIA
  • Inventor
  • IZA MICHAEL
  • BAKER TROY J
  • HASKELL BENJAMIN A
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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