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Method for improved growth of semipolar (Al,In,Ga,B)N achieved

Foreign code F110004801
File No. E06725WO
Posted date Jul 21, 2011
Country Republic of Korea
Application number 20087020383
Gazette No. 20080096783
Gazette No. 101510461
Date of filing Jan 19, 2007
Gazette Date Nov 3, 2008
Gazette Date Apr 8, 2015
International application number US2007001699
International publication number WO2007084782
Date of international filing Jan 19, 2007
Date of international publication Jul 26, 2007
Priority data
  • 60/760,739P (Jan 20, 2006) US
  • 2007US001699 (Jan 19, 2007) WO
Title Method for improved growth of semipolar (Al,In,Ga,B)N achieved
Abstract A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate.
Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
  • Applicant
  • UNIVERSITY OF CALIFORNIA
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • KAEDING JOHN F
  • IZA MICHAEL
  • BAKER TROY J
  • SATO HITOSHI
  • HASKELL BENJAMIN A
  • SPECK JAMES S
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
  • LEE DONG SEON
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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