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Field-effect transistor, single electron transistor, and sensor using same UPDATE

外国特許コード F110004814
整理番号 A242-23WO
掲載日 2011年7月22日
出願国 大韓民国
出願番号 20067004025
公報番号 20060036487
公報番号 100746863
出願日 平成18年2月27日(2006.2.27)
公報発行日 平成18年4月28日(2006.4.28)
公報発行日 平成19年8月7日(2007.8.7)
国際出願番号 JP2004012402
国際公開番号 WO2005022134
国際出願日 平成18年2月27日(2006.2.27)
国際公開日 平成17年3月10日(2005.3.10)
優先権データ
  • 特願2003-307798 (2003.8.29) JP
発明の名称 (英語) Field-effect transistor, single electron transistor, and sensor using same UPDATE
発明の概要(英語) A sensor for detecting a substance to be detected. The sensor includes a field-effect transistor (1A) having a substrate (2), a source electrode (4) and a drain electrode (5) both installed on the substrate (2), and a channel (6) to serve as a current path between the source electrode (4) and the drain electrode (5). The field-effect transistor (1A) further includes an interaction sensing gate (9) for immobilizing a specific substance (10) interactive selectively with the substance to be detected and a gate (7) to which a voltage is applied so that the interaction is detected as a characteristic variation of the field-effect transistor (1A). Such a structure enables a sensor to detect a substance to be detected with a high detection sensitivity.
(C) KIPO WIPO 2007
特許請求の範囲(英語) [claim1]
1. A substrate, the source electrode and drain electrode formed on the substrate and, a current path between said source electrode and a drain electrode and a channel field effect transistor including, in order to detect a substance to be detected as a sensor,
Wherein the field effect transistor,
Wherein the substance to be detected which interacts selectively with a specific substance interaction in order to fix the sensing gate,
Wherein the interaction is detected as a change in the properties of the field effect transistor in order to have a voltage applied to the sensor.

[claim2]
2. Method according to claim 1,
Wherein said channel is provided, consisting of nano tube structure is a sensor.

[claim3]
3. Method according to claim 2,
Where said nano tube structure, carbon nanotubes, titania nanotubes and boron nitride nanotubes selected from the group consisting of a structural body provided with a sensor.

[claim4]
4. Method according to claim 2 or 3,
The electrical characteristic of said nano tube structure has a semiconductor property of the sensor.

[claim5]
5. A substrate, the source electrode and drain electrode formed on the substrate and, a current path between said source electrode and a drain electrode and a channel with a single electron transistor, for detecting a substance to be detected as a sensor,
The single electron transistor,
Wherein the substance to be detected which interacts selectively with a specific substance interaction in order to fix the sensing gate,
Wherein the interaction is detected as a change of the properties of the single electron transistor to have a voltage applied to the sensor.

[claim6]
6. Method according to claim 5,
Wherein said channel is provided, consisting of nano tube structure is a sensor.

[claim7]
7. Method according to claim 6,
Where said nano tube structure, carbon nanotubes, titania nanotubes and boron nitride nanotubes selected from the group consisting of a structural body provided with a sensor.

[claim8]
8. Method according to claim 6 or 7,
Said nano tube structure in which the introduction of defects in the sensor.

[claim9]
9. Method according to claim 6 or 7,
The electrical characteristic of said nano tube structure has a metal property of the sensor.

[claim10]
10. 3 the method according to the first 1, method according to any one of claims 5-7,
Wherein said interaction sensing gate, the gate is different from the other gate of said sensor.

[claim11]
11. Method according to claim 10,
The other gate, formed on the surface side of the top gate, a channel formed on a side surface of the substrate and side gate, provided on the back side and back surface of said at least one sensor.

[claim12]
12. 3 the method according to the first 1, method according to any one of claims 5-7,
Wherein said channel is provided, in a state isolated from the substrate and source and drain electrodes is bridged between the sensor.

[claim13]
13. 3 the method according to the first 1, method according to any one of claims 5-7,
Wherein said channel is provided, between said source electrode and drain electrode at room temperature in a loose state of the formed sensor.

[claim14]
14. 3 the method according to the first 1, method according to any one of claims 5-7,
Wherein the substrate, wherein the insulating substrate is a sensor.

[claim15]
15. 3 the method according to the first 1, method according to any one of claims 5-7,
Wherein said channel is provided, which is coated with an insulating member in the sensor.

[claim16]
16. 3 the method according to the first 1, method according to any one of claims 5-7,
Wherein the channel and the interaction between the sensing gate insulating material of low dielectric constant layer is formed of the sensor.

[claim17]
17. 3 the method according to the first 1, method according to any one of claims 5-7,
Wherein the channel and between the gate dielectric layer is formed of insulating material and the sensor.

[claim18]
18. 3 the method according to the first 1, method according to any one of claims 5-7,
Wherein interaction between the sensing gate for a particular material to thereby form the sensor.

[claim19]
19. A substrate, the source electrode and drain electrode formed on the substrate and, wherein a current path between said source electrode and drain electrode and the channel, with a sensor for detecting a target material to be used as a field effect transistor,
Wherein the substance to be detected which interacts selectively with a specific substance interaction in order to fix the sensing gate,
Wherein the interaction is detected as a change of the properties of the field effect transistor to which a voltage is applied to the gate of a field effect transistor.

[claim20]
20. AMEND STATUS: Delete

[claim21]
21. AMEND STATUS: delete

[claim22]
22. AMEND STATUS: delete

[claim23]
23. AMEND STATUS: delete

[claim24]
24. A substrate, the source electrode and drain electrode formed on the substrate and, wherein a current path between said source electrode and drain electrode and the channel, for detecting a substance to be detected sensor for use as a single electron transistor,
Wherein the substance to be detected which interacts selectively with a specific substance interaction in order to fix the sensing gate,
Wherein the interaction is detected as a change of the properties of the single electron transistor to have a voltage applied to the single electron transistor.

[claim25]
25. AMEND STATUS: Delete

[claim26]
26. AMEND STATUS: delete

[claim27]
27. AMEND STATUS: delete

[claim28]
28. AMEND STATUS: delete

[claim29]
29. Method according to claim 24,
Said nano tube structure has been introduced into the defects in the single electron transistor.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • MATSUMOTO KAZUHIKO
  • KOJIMA ATSUHIKO
  • NAGAO SATORU
  • KATOU MASANORI
  • YAMADA YUTAKA
  • NAGAIKE KAZUHIRO
  • IFUKU YASUO
  • MITANI HIROSHI
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
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