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An amorphous oxide and a thin film transistor using the amorphous oxide. More specifically, an amorphous oxide having an electron carrier concentration of less than 1018 /cm3 and a thin film transistor using the amorphous oxide. The thin film transistor is provided with a source electrode (6), a drain electrode (5), a gate electrode (4), a gate insulating film (3) and a channel layer (2). As the channel layer (2), the amorphous oxide having an electron carrier concentration of less than 1018/cm3 is used.
