Amorphous oxide and thin film transistor
| 外国特許コード | F110004821 |
|---|---|
| 整理番号 | E06015WO |
| 掲載日 | 2011年7月22日 |
| 出願国 | 大韓民国 |
| 出願番号 | 20067017632 |
| 公報番号 | 20060123765 |
| 公報番号 | 101019337 |
| 出願日 | 平成17年2月28日(2005.2.28) |
| 公報発行日 | 平成18年12月4日(2006.12.4) |
| 公報発行日 | 平成23年3月7日(2011.3.7) |
| 国際出願番号 | JP2005003273 |
| 国際公開番号 | WO2005088726 |
| 国際出願日 | 平成17年2月28日(2005.2.28) |
| 国際公開日 | 平成17年9月22日(2005.9.22) |
| 優先権データ |
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| 発明の名称 （英語） |
Amorphous oxide and thin film transistor
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| 発明の概要（英語） |
An amorphous oxide and a thin film transistor using the amorphous oxide. More specifically, an amorphous oxide having an electron carrier concentration of less than 10(18) /cm(3) and a thin film transistor using the amorphous oxide. The thin film transistor is provided with a source electrode (6), a drain electrode (5), a gate electrode (4), a gate insulating film (3) and a channel layer (2). As the channel layer (2), the amorphous oxide having an electron carrier concentration of less than 10(18)/cm(3) is used. (C) KIPO WIPO 2007 |
| 従来技術、競合技術の概要（英語） |
BACKGROUND ART A gate of the thin film transistor (Thin Film Transistor, TFT) (gate) terminal, a source terminal and a drain terminal 3 as provided with a terminal element, a film on the substrate (deposition) of the semiconductor thin film (hole) for the movement of the electron or hole channel is used as the channel layer, a voltage is applied to the gate terminal of the current flowing in the channel layer by controlling a current between the source and drain terminals having the function of switching the active elements. As TFT currently the most widely used is that if the polycrystalline silicon film or amorphous silicon film material with a liquid crystal display element Metal-Insulator-Semiconductor Field Effect Transistor(MIS-FET) channel layer. In addition, in recent years using a transparent conductive oxide polycrystalline thin film ZnO a channel layer of an actively developed using TFT (patent document 1) has been made. The thin film may be formed at low temperature and at the same time since it is transparent to visible light on a substrate such as a plastic plate or film (flexible) to form a flexible transparent TFT is possible. However, the conventional stable amorphous phase at room temperature ZnO cannot be formed, for the most part ZnO min and a polycrystalline phase at the interface between polycrystalline particles because the scattering of the electron mobility does not have to be made large. Moreover ZnO is an oxygen defect is caused to occur, generation of many carrier electrons to reduce the electrical conductivity is difficult. Because of this transistor is turned on and off of a large ratio of (ON OFF ·i′) also difficult. In addition, in Patent document 2 as an amorphous oxide ZnxMyInzO(x+3y/2+3z/2) (wherein, M Ga Al and at least one element of is and, if the ratio 0.2-12 is in the range of z/y ratios x/y and 0.4-1. 4 the present invention. in the range of) an amorphous oxide represented by the method has been described. However obtained in electron carrier concentration of the amorphous oxide film 1018/cm3 or more, a transparent electrode in a simple but sufficient to provide the channel layer is difficult to apply TFT was achieved. This is because the amorphous oxide film of a channel layer in a ratio is sufficiently turned on and off TFT could not be obtained in a normally off type and not suitable for the TFT as it has been found that the present invention. Patent document 1: Japanese Unexamined Patent Application Publication No. 2003-298062 Patent document 2: Japanese Unexamined Patent Application Publication No. 2000-044236 |
| 特許請求の範囲（英語） |
[claim1]-[claim22] 1.-22. AMEND STATUS: Delete [claim23] 23. A channel layer, a gate insulating film, gate electrode, source electrode and drain electrode having a thin film transistor, Is deposited by vapor phase deposition methods, In, Ga, O Zn and constituted by a transparent amorphous oxide thin film and, wherein the oxide of the composition of the crystallized composition when InGaO3(ZnO) m(mis 6 a natural number less than) and, the impurity ion is added without an electron mobility of 1cm2/(V · sec) of more than 10 at the same time as the electron carrier concentration can16/cm3 semi semi transparent than the amorphous oxide thin film and a channel layer of the thin film transistor. [claim24] 24. A channel layer, a gate insulating film, gate electrode, source electrode and drain electrode having a thin film transistor, Is deposited by vapor phase deposition methods, In, Ga, Zn, O Mg and in which a transparent amorphous oxide thin film element and, wherein the composition of the composition of the crystallized InGaO when3(Zn1-xMgxO) m(mis 6 a natural number, 0.80≤x<0.85) and, the impurity ion is added without an electron mobility of 1cm2/(V · sec) of more than 10 at the same time as the electron carrier concentration can16/cm3 semi semi transparent lower channel layer of an amorphous oxide thin film and a thin film transistor. [claim25] 25. Al as a gate insulation film2O3, Y2O3, or HfO2species or at least a compound of 1 2 or a mixed crystal compound containing at least one kind of said use according to claim 23 or 24 wherein the thin film transistor. [claim26] 26. As the substrate is a glass substrate, plastic substrate or plastic film is used for the claims 23 to 24 or a thin film transistor substrate. |
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| 国際特許分類(IPC) |
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| 参考情報 （研究プロジェクト等） | ERATO HOSONO Transparent ElectroActive Materials AREA |
日本語項目の表示
| 発明の名称 |
アモルファス酸化物及び薄膜トランジスタ
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