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AMORPHOUS OXIDE AND THIN FILM TRANSISTOR achieved

Foreign code F110004821
File No. E06015WO
Posted date Jul 22, 2011
Country Republic of Korea
Application number 20067017632
Gazette No. 20060123765
Gazette No. 101019337
Date of filing Feb 28, 2005
Gazette Date Dec 4, 2006
Gazette Date Mar 7, 2011
Priority data
  • P2004-071477 (Mar 12, 2004) JP
  • P2004-325938 (Nov 10, 2004) JP
Title AMORPHOUS OXIDE AND THIN FILM TRANSISTOR achieved
Abstract

An amorphous oxide and a thin film transistor using the amorphous oxide. More specifically, an amorphous oxide having an electron carrier concentration of less than 1018 /cm3 and a thin film transistor using the amorphous oxide. The thin film transistor is provided with a source electrode (6), a drain electrode (5), a gate electrode (4), a gate insulating film (3) and a channel layer (2). As the channel layer (2), the amorphous oxide having an electron carrier concentration of less than 1018/cm3 is used.

  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • HOSONO HIDEO,
  • HIRANO MASAHIRO,
  • OTA HIROMICHI,
  • KAMIYA TOSHIO,
  • NOMURA KENJI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO HOSONO Transparent ElectroActive Materials AREA
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