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GROWTH OF PLANAR, NON-POLAR GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY achieved

Foreign code F110004822
File No. E06701WO
Posted date Jul 22, 2011
Country Republic of Korea
Application number 20057011014
Gazette No. 20050088437
Gazette No. 101086155
Date of filing Jul 15, 2003
Gazette Date Sep 6, 2005
Gazette Date Nov 25, 2011
Priority data
  • 20020433843P (Dec 16, 2002) US
  • 20020433844P (Dec 16, 2002) US
Title GROWTH OF PLANAR, NON-POLAR GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY achieved
Abstract

Highly planar non-polar a-plane GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.

  • Applicant
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • HASKELL BENJAMIN A,
  • FINI PAUL T,
  • MATSUDA SHIGENMASA,
  • CRAVEN MICHAEL D,
  • DENBAARS STEVEN P,
  • SPECK JAME S,
  • NAKAMURA SHUJI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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