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HIGHLY EFFICIENT GROUP-III NITRIDE BASED LIGHT EMITTING DIODES VIA FABRICATION OF STRUCTURES ON AN N-FACE SURFACE achieved

Foreign code F110004824
File No. E06704WO
Posted date Jul 22, 2011
Country Republic of Korea
Application number 20067013748
Gazette No. 20060131799
Gazette No. 101156146
Date of filing Dec 9, 2003
Gazette Date Dec 20, 2006
Gazette Date Jun 18, 2012
Title HIGHLY EFFICIENT GROUP-III NITRIDE BASED LIGHT EMITTING DIODES VIA FABRICATION OF STRUCTURES ON AN N-FACE SURFACE achieved
Abstract

A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo- enhanced chemical (PEC) etching.

  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY,
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
  • Inventor
  • FUJII TETSUO,
  • GAO YAN,
  • HU EVELYN L,
  • NAKAMURA SHUJI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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