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Method of Growing Semiconductor Crystal meetings

Foreign code F110004845
File No. K02008KR
Posted date Jul 22, 2011
Country Republic of Korea
Application number 20057017533
Gazette No. 20050109593
Gazette No. 100715828
Date of filing Sep 16, 2005
Gazette Date Nov 21, 2005
Gazette Date May 10, 2007
International application number JP2004003689
International publication number WO2004084283
Date of international filing Sep 16, 2005
Date of international publication Sep 30, 2004
Priority data
  • P2003-076044 (Mar 19, 2003) JP
Title Method of Growing Semiconductor Crystal meetings
Abstract SiC is an extremely stable substance, so that it is difficult to control the surface condition of SiC for one suitable for crystal growth by means of common Group III nitride crystal growing apparatus.
Thus, the following treatment is performed.
The surface of SiC substrate (1) is formed into a step-terrace structure by heat treatment in an atmosphere of HCl gas.
The surface of SiC substrate (1) is sequentially subjected to royal water, hydrochloric acid and hydrofluoric acid treatments so as to etch a silicon oxide film slightly formed on the surface of SiC substrate (1), thereby producing SiC cleaned surface (3) at the substrate surface.
The SiC substrate (1) is secured in a high vacuum apparatus, and ultrahigh vacuum condition (e.g., 10- 6 to 10-8 Pa) is held inside the apparatus.
In ultrahigh vacuum condition, for example, a process comprising irradiating Ga atom beams (5) at time t1 at 800°C or below and conducting heat treatment at 800°C or above is repeated at least once.
The temperature is set for AlN film growing temperature, and in ultrahigh vacuum condition the surface (3) of SiC substrate is irradiated in advance with Al atom (8a).
Thereafter, N atom (8b) is fed thereto.
Scope of claims [claim1]
1. S i c surface one step process to eliminate the oxide film on its surface, forming terraces and

Having a process to grow 1 Π group nitrides under high vacuum S i or G a and the subsequent high temperature heating process at least at least more than one cycle after the crystal growth method.
[claim2]
2. Crystal growth method of billing features to substrate in the process to grow above ΙΠ-v nitride wherein high-temperature heating process at low temperature than the temperature, do-scope (1);
[claim3]
3. Process to form a S i C surface smooth and clean and

To grow the ΙΠ group nitrides under high vacuum process, followed by ΠΙ group elements were later made to supply nitrogen processes and

With crystal growth method.
[claim4]
4. Process to form a S i C surface smooth and clean and

And in the process develops the ΠΙ group nitrides under high vacuum wherein S i C surfaces on contact surface control elements to control crystal growth patterns of the above ΙΠ of nitride to the supply process and

And then turn off of _said_ surface control elements, ΙΠ elements and nitrogen supply and process

With crystal growth method.
[claim5]
5. Above surface control elements is to feature claims that a G or I n-range (4) crystal growth method.
[claim6]
6. S i C surface, one step process to control the terrace structure and

And the atmosphere under the pressure the oxygen partial pressure and remove the oxide layer on the surface of the II-v nitride growth process

With crystal growth method.
[claim7]
7. S i C surface is (0 0 0 1) s; or (0 0 0 ― 1) c -plane from force 0 1 (1) any claim to have up to 5 ° offset angle range (1), paragraph (6) of the method of crystal growth.
[claim8]
8. S i C layer and

m of the nitride layer and

G a nuclear residual between S i C layer and ΙΠ of nitride layer or I and n atoms having laminated structure.

Summary of statements

S i C is extremely stable control material, which usually Group II nitride crystal growth apparatus, suitable for S i C surface crystallization conditions is difficult. So, the following process.

HC 1 gas atmosphere in heat treatment surface S i C PCB 1 step one terrace structures and the surfaces of the S i C Board 1 by aqua regia, hydrochloric acid, hydrofluoric acid sequential line shall be S i C clean surface 3 is formed on the substrate surface by etching Silicon oxide surface of S i C PCB 1 is formed slightly in high-vacuum equipment, replacing the ultra high vacuum conditions, S i C PCB 1 (for example, 1 0 ― 6-1 0 ― 8P a) to held. Under ultra high vacuum conditions, for example repeated irradiation time t 1 G a Atomic beam 5 at 800 ° C or less at over 800 ° C heat treatment process at least once more, A 1 set, and growth temperature of N films under ultra high vacuum 1 Atom 8 a S i C substrate surface 3 to prior exposure and, after that, supplying the N atoms 8 b. Claims for compensation

[2 0 0 8/4 1 8 (1 8. 0 8. 0 4) International Bureau accepted: amended the originally filed claims ranges 3, 4, 6 and 8; other claims unchanged. ]
[claim9]
1. S i C surface step ― process to eliminate the oxide film on its surface, forming terraces and

Have the process develops m-v nitride after high temperature heating process at least 1 cycle at least, under high vacuum, beam S i or G a crystal growth method.
[claim10]
2. Claim 1 to feature in a process wherein high-temperature heating process to grow above m-v nitride substrate at low temperature than the temperature, do, crystal growth method.
[claim11]
3. And the process to form a S i C surface smooth and clean, and remove the acid program must film (after correction)

Stage nitrogen supply and in the process develops the m group nitrides under high vacuum, followed by p elements, supplied with

With crystal growth method.
[claim12]
4. And the process to form a S i C surface smooth and clean, and remove the acid ICH film (after correction)

Process followed by surface control elements to control crystal growth pattern wherein m of nitride films on the foregoing s i c surface and in the process develops the m group nitrides under high vacuum, supply and

as with m elements and nitrogen supply, followed by a stop above surface control element supply enough

With crystal growth method.
[claim13]
5. Above surface control elements is to feature claims that a G or I n-range (4) crystal growth method.
[claim14]
6. (After correction) S i C surface steps ― using a solution containing hydrofluoric acid in the decompression process controlling the terrace structure and oxygen partial pressure environment removes the oxide layer on the surface of Π [-v nitride develops processes and

With crystal growth method.
[claim15]
7. S i C surface is (0 0 0 1) S i or (0 0 0 ― 1) C-plane 0 and 1 (1) any claim to have up to 5 ° offset angle range (1), paragraph (6) of the method of crystal growth.

20

Corrected for see seed (article-Braised 9)
[claim16]
8. (after correction) S i C and

A and N-tier

G a nuclear residual wherein i C layer and A layer IN between or I and n atoms having laminated structure.

21

Ί corrected sheet (article 19 of the Convention)

1 the Convention based on article 9 of the manual

(1) in the scope of paragraph 3 and paragraph 4, S i C surface smooth and proper form to clearly indicate which equips the process to remove surface oxide film on the part was. The long-cherished desire statements ", Figure 1 S i C PCB 1 began taking in the atmosphere, as shown in (B) surface performed sequentially by aqua regia, hydrochloric acid, hydrofluoric acid. By hydrofluoric acid treatment on the surface of the S i C PCB 1 formed slightly is able to remove silicon dioxide is. S i C clean surface 3 is formed on the substrate surface. The stands (report No. 6 pp. 24-27 lines) "and described.

(2) shall be carried out using the process to remove surface oxide films in the request scope (6) hydrofluoric acid solution of. The long-cherished desire statements "Figure 9 freshening surfaces 43 S i C Board 41 by aqueous solution containing hydrofluoric acid as shown in (B), without touching the oxygen into the MB E sample introduction, high vacuum, exhaust, Figure 9 like embodiment of other crystal growth method, as shown in (C) MB E equipment in high vacuum conditions (P = 1 0 ― 6-1 0 one 8 P a) smell the A 1 N film 5 to grow 1. Below stands (1 statement 3 p. 24-2 8 rows) "and described.

(3) only indicate the range of claims paragraph 8 under A N I I I group nitrides. S i C layer onto A 1 during formation of N-tier 1 shall be irradiated G a beam ago the formation of the N-tier (from diagram 1, page 7 of the report 1 statement 1 page 3 line no. 8, page 2) is described.
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SUDA JUN
  • MATSUNAMI HIROYUKI
  • ONOJIMA NORIO
IPC(International Patent Classification)
Reference ( R and D project ) PRESTO Nanostructure and Material Property AREA
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