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METHOD AND DEVICE FOR GROWING HIGH-QUALITY MONOCRYSTAL achieved

Foreign code F110004882
File No. Y0002RU
Posted date Jul 22, 2011
Country Russian Federation
Application number 2001134296
Gazette No. 2209860
Date of filing May 22, 2000
Gazette Date Aug 10, 2003
Priority data
  • P1999-178815 (May 22, 1999) JP
Title METHOD AND DEVICE FOR GROWING HIGH-QUALITY MONOCRYSTAL achieved
Abstract

FIELD: production of crystals . SUBSTANCE: growing monocrystal is performed by bringing seed crystal 4 in contact with melt 2 of raw material molten in crucible 1 where element 5 made in form of blade or partition is located

monocrystal is grown by drawing it from melt 2 of raw materials during rotation of crucible 1. EFFECT: enhanced efficiency

improved characteristics of crystal. 12 cl, 7 dwg

  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • SASAKI TAKAMOTO,
  • MORI JUSUKE,
  • JOSHIMURA MASASHI
IPC(International Patent Classification)
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