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Method and apparatus for growing high quality single crystal achieved

Foreign code F110004887
File No. Y0002TW
Posted date Jul 22, 2011
Country Taiwan
Application number 89109805
Gazette No. 538148
Date of filing May 22, 2000
Gazette Date Jun 21, 2003
Priority data
  • P1999-178815 (May 22, 1999) JP
Title Method and apparatus for growing high quality single crystal achieved
Abstract

In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1), a blade member (5) or a baffle member is disposed in the raw material melt (2) in the crucible (1) and a single crystal is grown by pulling up it with rotating the crucible (1) to thereby grow various single crystals including CLBO from the highly viscous raw material melt (2) as high quality and high performance crystals.

  • Applicant
  • JAPAN SCIENCE AND TECHNOLGY CORPORATION
  • Inventor
  • SASAKI, TAKATOMO,
  • MORI, YUSUKE,
  • YOSHIMURA, MASASHI
IPC(International Patent Classification)
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