Method and apparatus for growing high quality single crystal
|Posted date||Jul 22, 2011|
|Date of filing||May 22, 2000|
|Gazette Date||Jun 21, 2003|
|Title||Method and apparatus for growing high quality single crystal|
In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1), a blade member (5) or a baffle member is disposed in the raw material melt (2) in the crucible (1) and a single crystal is grown by pulling up it with rotating the crucible (1) to thereby grow various single crystals including CLBO from the highly viscous raw material melt (2) as high quality and high performance crystals.
|IPC(International Patent Classification)|
Contact Information for " Method and apparatus for growing high quality single crystal "
- Japan Science and Technology Agency Department of Intellectual Property Management
- URL: http://www.jst.go.jp/chizai/
- Address: 5-3, Yonbancho, Chiyoda-ku, Tokyo, Japan , 102-8666
- Fax: 81-3-5214-8476