Top > Search of International Patents > SOLID ELECTROLYTE SWITCHING DEVICE, FPGA USING SAME,MEMORY DEVICE, AND METHOD FOR MANUFACTURING SOLIDELECTROLYTE SWITCHING DEVICE

SOLID ELECTROLYTE SWITCHING DEVICE, FPGA USING SAME,MEMORY DEVICE, AND METHOD FOR MANUFACTURING SOLIDELECTROLYTE SWITCHING DEVICE

Foreign code F110004950
File No. B01-01WO
Posted date Jul 27, 2011
Country Republic of Korea
Application number 20047017513
Gazette No. 20040111563
Gazette No. 1006764510000
Date of filing Oct 29, 2004
Gazette Date Dec 31, 2004
Gazette Date Jan 24, 2007
International application number PCT/JP2003/005393
International publication number WO2003/094227
Date of international filing Apr 25, 2003
Date of international publication Nov 13, 2003
Priority data
  • P2002-129283 (Apr 30, 2002) JP
  • P2002-346129 (Nov 28, 2002) JP
Title SOLID ELECTROLYTE SWITCHING DEVICE, FPGA USING SAME,MEMORY DEVICE, AND METHOD FOR MANUFACTURING SOLIDELECTROLYTE SWITCHING DEVICE
Abstract Solid electrolyte switching elements (10, 10' 20, 20') comprises the first interconnection layer (13) installed on the substrate (11) in which surface is covered with the insulating layer, and the ion supply layer (17) installed on the first interconnection layer (13), the solid electrolyte layer (16), installed on the ion supply layer (17) and the first interconnection layer (13), and the ion supply layer (17), and the interlayer dielectric layer (12) having the via hole which is installed in order to cover the solid electrolyte layer (16), and the opposite electrode layer (15), which is installed it through the via hole contacts in the solid electrolyte layer (16) and the second wiring layer (14) which is installed in order to cover the opposite electrode layer (15). The switching element having a low moreover, the resistance of on state it is the non-volatility on state, and the OFF-state can be arbitrarily set up as the threshold voltage applied between the ion supply layer (17) and opposite electrode layer (15) can be provided.
The solid electrolyte switching element, the memory device, EPGA, the ion supply layer, the interlayer dielectric layer, the opposite electrode layer, the via hole, the sulfidation process .
  • Applicant
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • RIKEN
  • Inventor
  • SAKAMOTO,Toshitsugu
  • AONO,Masakazu
  • HASEGAWA,Tsuyoshi
  • NAKAYAMA,Tomonobu
  • SUNAMURA,Hiroshi
  • KAWAURA,Hisao
  • SUGIBAYASHI,Naohiko
IPC(International Patent Classification)
Reference ( R and D project ) SORST Selected in Fiscal 2000
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