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TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE achieved

Foreign code F110004991
File No. E06712KR1
Posted date Aug 2, 2011
Country Republic of Korea
Application number 20117007416
Gazette No. 20110044332
Gazette No. 101145753
Date of filing Mar 10, 2006
Gazette Date Apr 28, 2011
Gazette Date May 16, 2012
Priority data
  • 20050660283P (Mar 10, 2005) US
Title TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE achieved
  • Applicant
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • Inventor
  • BAKER TROY J,
  • HASKELL BENJAMIN A,
  • FINI PAUL T,
  • DENBAARS STEVEN P,
  • SPECK JAMES S,
  • NAKAMURA SHUJI
IPC(International Patent Classification)
Reference ( R and D project ) ERATO NAKAMURA Inhomogeneous Crystal AREA
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