Millimeter wave and far-infrared detector
| Foreign code | F110005039 |
|---|---|
| File No. | A041-07US |
| Posted date | Aug 18, 2011 |
| Country | United States of America |
| Application number | 76360301 |
| Gazette No. | 06627914 |
| Date of filing | Feb 26, 2001 |
| Gazette Date | Sep 30, 2003 |
| International application number | PCT/JP00/04540 |
| International publication number | WO01/06572 |
| Date of international filing | Jul 7, 2000 |
| Date of international publication | Jan 25, 2001 |
| Priority data |
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| Title | Millimeter wave and far-infrared detector |
| Abstract | An MR/FIR light detector is disclosed herein that has extraordinarily high degree of sensitivity and a high speed of response. The detector includes an MR/FIR light introducing section (1) for guiding an incident MR/FIR light (2), a semiconductor substrate (14) formed with a single-electron transistor (14) for controlling electric current passing through a semiconductor quantum dot (12) formed therein, and a BOTAI antenna (6, 6a, 6b, 6c) for concentrating the MW/FIR light (2) into a small special zone of sub-micron size occupied by the semiconductor quantum dot (12) in the single-electron transistor (14). The quantum dot (12) forming a two-dimensional electron system absorbs the electromagnetic wave concentrated efficiently, and retains an excitation state created therein for 10 nanoseconds or more, thus permitting electrons of as many as one millions in number or more to be transferred with respect to a single photon absorbed. |
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| IPC(International Patent Classification) | |
| Reference ( R and D project ) | CREST Quantum Effects and Related Physical Phenomena AREA |
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Contact Information for " Millimeter wave and far-infrared detector "
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