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Millimeter wave and far-infrared detector

Foreign code F110005039
File No. A041-07US
Posted date Aug 18, 2011
Country United States of America
Application number 76360301
Gazette No. 06627914
Date of filing Feb 26, 2001
Gazette Date Sep 30, 2003
International application number PCT/JP00/04540
International publication number WO01/06572
Date of international filing Jul 7, 2000
Date of international publication Jan 25, 2001
Priority data
  • P1999-334196 (Nov 25, 1999) JP
  • P1999-228037 (Aug 11, 1999) JP
  • P1999-202261 (Jul 15, 1999) JP
Title Millimeter wave and far-infrared detector
Abstract An MR/FIR light detector is disclosed herein that has extraordinarily high degree of sensitivity and a high speed of response. The detector includes an MR/FIR light introducing section (1) for guiding an incident MR/FIR light (2), a semiconductor substrate (14) formed with a single-electron transistor (14) for controlling electric current passing through a semiconductor quantum dot (12) formed therein, and a BOTAI antenna (6, 6a, 6b, 6c) for concentrating the MW/FIR light (2) into a small special zone of sub-micron size occupied by the semiconductor quantum dot (12) in the single-electron transistor (14). The quantum dot (12) forming a two-dimensional electron system absorbs the electromagnetic wave concentrated efficiently, and retains an excitation state created therein for 10 nanoseconds or more, thus permitting electrons of as many as one millions in number or more to be transferred with respect to a single photon absorbed.
  • Inventor, and Inventor/Applicant
  • Komiyama, Susumu; Tokyo [JP]
  • Oleg, Astafiev; Tokyo [JP]
  • Vladimir, Antonov; Kanagawa [JP]
  • Hirai, Hiroshi; Tokyo [JP]
  • Kutsuwa, Takeshi; Tokyo [JP]
  • Japan Science and Technology Corporation, Kawaguchi [JP]
IPC(International Patent Classification)
Reference ( R and D project ) CREST Quantum Effects and Related Physical Phenomena AREA
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