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Point contact array, not circuit, and electronic circuit comprising the same

Foreign code F110005050
File No. A041-39US
Posted date Aug 18, 2011
Country United States of America
Application number 36325901
Gazette No. 20030174042
Gazette No. 7026911
Date of filing Oct 29, 2001
Gazette Date Sep 18, 2003
Gazette Date Apr 11, 2006
International application number JP2001009464
International publication number WO2002037572
Date of international filing Oct 29, 2001
Date of international publication May 10, 2002
Priority data
  • P2000-334686 (Nov 1, 2000) JP
  • P2001-138103 (May 9, 2001) JP
  • 2001WO-JP09464 (Oct 29, 2001) WO
Title Point contact array, not circuit, and electronic circuit comprising the same
Abstract (US7026911)
A point contact array, including plural point contacts electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, a memory device, a NOT circuit, and an electronic circuit including the same.
The circuit includes plural point contacts each including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance.
The conductance of each point contact is controlled to realize the circuit.
Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material.
When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0<x<100) is preferably used as the semiconductor or insulator material.
The NOT circuit is realized using a device including an atomic switch serving as a two-terminal device, the device including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance, and capable of controlling conductance between the electrodes.
Scope of claims [claim1]
1. A point contact array comprising a plurality of electronic devices, each of which comprises a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance, wherein the first and second electrodes are arranged so as not to be in direct contact with each other and form a space therebetween, and each of the electronic devices can control conductance between the electrodes by means of controlling formation and deformation of a bridge of metal atoms within the space.
[claim2]
2. The point contact array according to claim 1, wherein the compound conductive material having mobile ions (M ion: M denotes a metallic atom) is formed on a source of the mobile ions (M).
[claim3]
3. The point contact array according to claim 1, wherein the compound conductive material is Ag2S, Ag2Se, Cu2S, or Cu2Se.
[claim4]
4. The point contact array according to claim 1, wherein a semiconductor or insulator material, which can dissolve ions and which exhibits electronic conductivity and ionic conductivity due to the dissolution of ions, is arranged between the first and second electrodes, and mobile ions contained in the compound conductive material enter the semiconductor or insulator material to change the conductance of the semiconductor or insulator.
[claim5]
5. The point contact array according to claim 4, wherein the semiconductor or insulator material is a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0<x<100).
[claim6]
6. The point contact array according to claim 1, wherein a metallic wire, of which at least one part is covered with the compound conductive material, functions as the first electrode, a metallic wire functions as the second electrode, a plurality of metallic wires functioning as at least one of the electrodes exist, and a point contact is arranged at each intersection of the metallic wires.
[claim7]
7. The point contact array according to claim 1, wherein the conductance of each point contact is quantized.
[claim8]
8. The point contact array according to claim 7, functioning as a multiple recording memory device in which the quantized conductance of each point contact is used as a recording state.
[claim9]
9. The point contact array according to claim 7, wherein the quantized conductance of each point contact is used as an input signal, and the potentials of the respective electrodes are controlled to perform addition or subtraction of the input signals.
[claim10]
10. The point contact array according to claim 1, functioning as a logic circuit in which a potential at one end of each point contact is used as an input signal.
  • Inventor, and Inventor/Applicant
  • AONO MASAKAZU
  • HASEGAWA TSUYOSHI
  • TERABE KAZUYA
  • NAKAYAMA TOMONOBU
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • RIKEN
IPC(International Patent Classification)
Reference ( R and D project ) CREST Quantum Effects and Related Physical Phenomena AREA
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