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Combinatorial molecular layer epitaxy device achieved

Foreign code F110005061
File No. A051-11US
Posted date Aug 18, 2011
Country United States of America
Application number 55401100
Gazette No. 06344084
Date of filing May 9, 2000
Gazette Date Feb 5, 2002
International application number PCT/JP99/04946
International publication number WO00/15884
Date of international filing Sep 10, 1999
Date of international publication Mar 23, 2000
Priority data
  • P1998-258967 (Sep 11, 1998) JP
  • P1998-258968 (Sep 11, 1998) JP
  • P1998-258969 (Sep 11, 1998) JP
  • P1998-258970 (Sep 11, 1998) JP
Title Combinatorial molecular layer epitaxy device achieved
Abstract A combinatorial molecular layer epitaxy apparatus is provided which includes a common chamber (22) having pressure therein controllable; one or more conveyable substrate heating units (36) having a substrate holder (48) for holding one or more substrates in the common chamber; and one or more process conducting chambers (24, 26, 28) having pressure therein controllable and provided to correspond to the substrate heating units. The process conducting chambers includes a growth chamber (24) which has a multiple raw material supply means for supplying raw materials onto a substrate (5) held by a substrate heating unit, a gas supply means for feeding a gas onto a surface of the substrate, and an instantaneous observation means for instantaneously observing epitaxial growth of monomolecular layers for each of the layers on the substrate surface, thereby rendering the formation of vacuum chambers constituting from substrate heating unit and process conducting chambers, which are controllable in temperatures and pressures.
  • Inventor, and Inventor/Applicant
  • Koinuma, Hideomi; Yokohama [JP]
  • Kawasaki, Masashi; Yokohama [JP]
  • Japan Science and Technology Corporation, Kawaguchi [JP]
IPC(International Patent Classification)
Reference ( R and D project ) CREST Single Molecule and Atom Level Reactions AREA
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