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Iridium-based alloy with high heat resistance and high strength and process for producing the same

Foreign code F110005231
File No. A281-10WO
Posted date Aug 26, 2011
Country United States of America
Application number 11230608
Gazette No. 20080206090
Gazette No. 07666352
Date of filing Apr 30, 2008
Gazette Date Aug 28, 2008
Gazette Date Feb 23, 2010
International application number PCT/JP2007/052069
Date of international filing Jan 31, 2007
Title Iridium-based alloy with high heat resistance and high strength and process for producing the same
Abstract An iridium-based alloy which has L12-type intermetallic compounds dispersedly precipitated therein and has a basic composition including, in terms of mass proportion, 0.1 to 9.0% Al, 1.0 to 45% W, and Ir as the remainder. The component system containing 0.1 to 1.5% Al has L12-type intermetallic compounds dispersedly precipitated therein. The component system containing 1.5 to 9.0%, excluding 1.5%, Al has L12-type and B2-type intermetallic compounds dispersedly precipitated therein. Part of the Ir may be replaced with an element (X) (Co, Ni, Fe, Cr, Rh, Re, Pd, Pt, or Ru) and part of the Al and W may be replaced with an element (Z) (Ni, Ti, Nb, Zr, V, Ta, Hf, or Mo). The iridium-based alloy, which contains L12-type intermetallic compounds [1r3(Al,W) and [(Ir, X)3(Al, W, Z)] dispersedly precipitated therein, has a high melting point. The lattice constant mismatch between the L12-type intermetallic compounds, i.e., [Ir3 (Al, W)] and [(Ir, X)3(Al, W, Z)], and the matrix is small and, hence, the iridium-based alloy is excellent in high-temperature strength and structural stability.
  • Inventor, and Inventor/Applicant
  • Ishida, Kiyohito; Sendai [JP]
  • Kainuma, Ryosuke; Natori [JP]
  • Oikawa, Katsunari; Sendai [JP]
  • Ohnuma, Ikuo; Shibata-gun [JP]
  • Ohmori, Toshihiro; Sendai [JP]
  • Sato, Jun; Sendai [JP]
  • Japan Science and Technology Agency, Saitama [JP]
IPC(International Patent Classification)
Reference ( R and D project ) CREST The Innovation of Simulation Technology and the Construction of Foundations for Its Practical Use AREA
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