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Electric device using solid electrolyte

Foreign code F110005237
File No. B01-02WO
Posted date Aug 29, 2011
Country United States of America
Application number 49059802
Gazette No. 20060157802
Gazette No. 7875883
Date of filing Sep 24, 2002
Gazette Date Jul 20, 2006
Gazette Date Jan 25, 2011
International application number JP2002009759
International publication number WO2003028124
Date of international filing Sep 24, 2002
Date of international publication Apr 3, 2003
Priority data
  • P2001-292392 (Sep 25, 2001) JP
  • 2002WO-JP09759 (Sep 24, 2002) WO
Title Electric device using solid electrolyte
Abstract (US7875883)
The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte.
In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface.
The solid electrolyte using the metal as a carrier is stacked on the metal.
The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor.
A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.
Scope of claims [claim1]
1. An electric device which is a solid electrolyte switch and having a latch function, comprising: a first metal thin film that is disposed on an insulating film, the first metal thin film contacting with the insulating film,
a solid electrolyte that is disposed on a top surface of the first metal thin film, a metal ion of the first metal thin film being used as a carrier in the solid electrolyte, and
a second metal thin film that is disposed over the solid electrolyte and over the top surface of the first metal thin film via an air gap,
wherein the second metal thin film does not make contact with the solid electrolyte, and
wherein the first metal thin film and the second metal thin film are partially overlapped in a vertical direction with respect to the insulating film.
[claim2]
2. An electric device which is a solid electrolyte switch and having a latch function, comprising: a solid electrolyte that is disposed in a first part on a top surface of an insulating film;
a first metal thin film that is disposed on the solid electrolyte; and
a second metal thin film that is disposed on the top surface of the insulating film,
wherein the solid electrolyte is disposed in a second part over the second metal thin film via an air gap,
wherein a metal ion as a carrier of the solid electrolyte being used as a material in the first metal thin film,
wherein the second metal thin film does not contact with the solid electrolyte, and
wherein the first metal thin film and the second metal thin film are partially overlapped in a vertical direction with respect to the insulating film.
[claim3]
3. A storage device, comprising: one storage cell forming a constituting element of the storage device comprises (1) one field-effect transistor and (2) one solid electrolyte switch according to claim 1 or 2,
the solid electrolyte switch according to claim 1 or 2 is disposed on a drain region of the field-effect transistor formed on a semiconductor substrate surface,
the second metal thin film of the solid electrolyte switch is connected to a common grounding conductor,
a source of the field-effect transistor is connected to a column address line, and
a gate of the field-effect transistor is connected to a row address line.
[claim4]
4. A storage device, comprising: one storage cell forming a constituting element of the storage device comprises (1) one diode and (2) one solid electrolyte switch according to claim 1 or 2,
the solid electrolyte switch according to claim 1 or 2 is disposed on one electrode of a diode formed on a semiconductor substrate surface,
the second metal thin film of the solid electrolyte switch is connected to row address line, and
the other electrode of the diode is connected to a column address line.
[claim5]
5. A storage device, comprising: one storage cell forming a constituting element of the storage device and comprising the solid electrolyte switch according to claim 1 or 2,
a part of the first metal thin film connected to a row address line formed on a semiconductor substrate surface is the solid electrolyte in which a metal ion of the first metal thin film is used as a carrier, and
the solid electrolyte intersects with the second metal thin film connected to a column address line via the air gap.
[claim6]
6. An electric device, wherein: a semiconductor thin film is disposed in a portion contacting with the gap in the second metal thin film according to claim 1 or 2, and
a Schottky barrier is formed in an interface between a semiconductor and a metal so that a rectification function operates, when the solid electrolyte switch turns on.
[claim7]
7. A storage device, wherein: a semiconductor thin film is disposed in a portion contacting with the gap in the second metal thin film according to claim 5, and
a Schottky barrier is formed in an interface between a semiconductor and a metal so that a rectification function operates, when the solid electrolyte switch turns on.
[claim8]
8. An electric device according to claim 1 or claim 2, wherein the solid electrolyte is any one of silver ion conductive solid electrolytes, and copper ion conductive solid electrolytes, and a second metal is any one of platinum, tungsten, aluminum, gold, copper, and silver.
[claim9]
9. A storage device according to claim 3, wherein the solid electrolyte is any one of silver ion conductive solid electrolytes, and copper ion conductive solid electrolytes, and said second metal is any one of platinum, tungsten, aluminum, gold, copper, and silver.
[claim10]
10. An electric device as the solid electrolyte switch according to claim 1 or 2, wherein: a voltage is applied between a solid electrolyte layer and an opposite electrode layer at a manufacturing time in order to control an on-voltage which transits to an on-state from an off-state and an off-voltage which transits to the off-state from the on-state.
[claim11]
11. An electric device as a field programmable gate array comprising the solid electrolyte switch according to claim 1 or 2, wherein: the solid electrolyte switch is used as a first switch of wirings between logic blocks and a second switch which selects a function of the logic block.
  • Inventor, and Inventor/Applicant
  • SAKAMOTO TOSHITSUGU
  • AONO MASAKAZU
  • HASEGAWA TSUYOSHI
  • NAKAYAMA TOMONOBU
  • TERABE KAZUYA
  • KAWAURA HISAO
  • SUGIBAYASHI TADAHIKO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • NEC
  • RIKEN
IPC(International Patent Classification)
Reference ( R and D project ) SORST Selected in Fiscal 2000
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