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Transistor with nanotube structure exhibiting N-type semiconductor-like characteristics UPDATE

外国特許コード F110005296
整理番号 A242-50US1
掲載日 2011年8月31日
出願国 アメリカ合衆国
出願番号 95597210
公報番号 20110068324
公報番号 8008650
出願日 平成22年11月30日(2010.11.30)
公報発行日 平成23年3月24日(2011.3.24)
公報発行日 平成23年8月30日(2011.8.30)
国際出願番号 JP2006302349
国際公開番号 WO2006085611
国際出願日 平成18年2月10日(2006.2.10)
国際公開日 平成18年8月17日(2006.8.17)
優先権データ
  • 特願2005-034476 (2005.2.10) JP
  • 2006WO-JP302349 (2006.2.10) WO
  • 2007US-11815871 (2007.10.5) US
発明の名称 (英語) Transistor with nanotube structure exhibiting N-type semiconductor-like characteristics UPDATE
発明の概要(英語) (US8008650)
An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties.
To realize this, a film of a nitrogenous compound 6 is formed directly on a channel 5 of a transistor 1 comprising a source electrode 2, a drain electrode 3, a gate electrode 4 and the n-type channel 5 having a nanotube-shaped structure and provided between the source electrode 2 and the drain electrode 3.
特許請求の範囲(英語) [claim1]
1. An n-type transistor comprising: a source electrode;
a drain electrode;
a gate electrode;
an n-type channel which has a nanotube-shaped structure and is provided between said source electrode and said drain electrode; and
a film of a nitrogenous compound which is formed directly on said channel while being heated, wherein
said channel is a channel which is converted from p-type to n-type at the time of film formation of the nitrogenous compound.
[claim2]
2. The n-type transistor according to claim 1, wherein said film of the nitrogenous compound is formed at temperature of 500 deg. C. or higher and 1600 deg. C. or lower.
[claim3]
3. The n-type transistor according to claim 1, wherein said film of the nitrogenous compound is formed through a thermal CVD technique.
[claim4]
4. The n-type transistor according to claim 1, wherein said film of the nitrogenous compound has an oxygen content of 0 atomic % or more and 10 atomic % or less.
[claim5]
5. The n-type transistor according to claim 1, wherein said film of the nitrogenous compound has a hydrogen content of 5 atomic % or more and 20 atomic % or less.
[claim6]
6. The n-type transistor according to claim 1, wherein said film of the nitrogenous compound is formed only on a top and side of said channel.
[claim7]
7. The n-type transistor according to claim 1, wherein said nanotube-shaped structure is a carbon nanotube.
[claim8]
8. The n-type transistor according to claim 1, wherein the nitrogenous compound is silicon nitride.
[claim9]
9. The n-type transistor according to claim 1, wherein said gate electrode is a top gate which is formed on said channel through said film of the nitrogenous compound.
[claim10]
10. The n-type transistor according to claim 1, wherein said film is formed directly on said channel, said source electrode, and said drain electrode while being heated.
[claim11]
11. An n-type transistor sensor comprising: a source electrode;
a drain electrode;
a gate electrode;
an n-type channel which has a nanotube-shaped structure and is provided between said source electrode and said drain electrode; and
a film of a nitrogenous compound which is formed directly on said channel while being heated, wherein
said channel is a channel which is converted from p-type to n-type at the time of film formation of the nitrogenous compound and said sensor detects a target object to be detected as a variation of a current flowing through said channel.
[claim12]
12. The n-type transistor sensor according to claim 11, wherein said film of the nitrogenous compound is formed at temperature of 500 deg. C. or greater and 1600 deg. or lower.
[claim13]
13. The n-type transistor sensor according to claim 11, wherein said film of the nitrogenous compound is a film which is formed through a thermal CVD technique.
[claim14]
14. The n-type transistor according to claim 11, wherein said film is formed directly on said channel, said source electrode, and said drain electrode while being heated.
  • 発明者/出願人(英語)
  • MATSUMOTO KAZUHIKO
  • KOJIMA ATSUHIKO
  • NAGAO SATORU
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • B82Y010/00
  • H01L021/02K2C1L9
  • H01L021/02K2E3B6
  • H01L021/318B
  • H01L029/06C6
  • H01L029/06C6W2
  • H01L029/786S
  • H01L051/00A6
  • H01L051/05B2B10
  • T01L029/786F
  • T01L029/786K
  • T01L051/00M4D
参考情報 (研究プロジェクト等) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
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